Photoluminescence of LiF Crystals Doped with Oxygen-Containing Impurities; Key Engineering Materials; Vol. 769 : High Technology: Research and Applications (HTRA 2017)

Bibliografiske detaljer
Parent link:Key Engineering Materials: Scientific Journal
Vol. 769 : High Technology: Research and Applications (HTRA 2017).— 2018.— [141-145]
Institution som forfatter: Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Отделение материаловедения
Andre forfattere: Korepanov V. I. Vladimir Ivanovich, Petikar P. V. Pavel Viktorovich, Ge Guanghui (Guang Hui Ge), Lipovka A. A. Anna Anatolyevna
Summary:Title screen
The aim of this paper is to study the photoluminescence spectra and photoluminescence excitation spectra in LiF-O, LiF-WO[3] and LiF-TiO[2] crystals at 20-300 K. It is shown that the luminescence centers in LiF-WO[3] and LiF-TiO[2] crystals are oxygen ions O{2-} disturbed by defects. Two absorption bands within 6-4.5 eV and two luminescence bands with maxima at 3.1 eV and 2.64 eV correspond to these centers. The absorption and emission spectra of the oxygen center (3.1 eV luminescence band) are close to those for the (O{2-}-V[a]) center.
Режим доступа: по договору с организацией-держателем ресурса
Sprog:engelsk
Udgivet: 2018
Fag:
Online adgang:https://doi.org/10.4028/www.scientific.net/KEM.769.141
Format: Electronisk Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658639