Photoluminescence of LiF Crystals Doped with Oxygen-Containing Impurities; Key Engineering Materials; Vol. 769 : High Technology: Research and Applications (HTRA 2017)

Dettagli Bibliografici
Parent link:Key Engineering Materials: Scientific Journal
Vol. 769 : High Technology: Research and Applications (HTRA 2017).— 2018.— [141-145]
Ente Autore: Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Отделение материаловедения
Altri autori: Korepanov V. I. Vladimir Ivanovich, Petikar P. V. Pavel Viktorovich, Ge Guanghui (Guang Hui Ge), Lipovka A. A. Anna Anatolyevna
Riassunto:Title screen
The aim of this paper is to study the photoluminescence spectra and photoluminescence excitation spectra in LiF-O, LiF-WO[3] and LiF-TiO[2] crystals at 20-300 K. It is shown that the luminescence centers in LiF-WO[3] and LiF-TiO[2] crystals are oxygen ions O{2-} disturbed by defects. Two absorption bands within 6-4.5 eV and two luminescence bands with maxima at 3.1 eV and 2.64 eV correspond to these centers. The absorption and emission spectra of the oxygen center (3.1 eV luminescence band) are close to those for the (O{2-}-V[a]) center.
Режим доступа: по договору с организацией-держателем ресурса
Lingua:inglese
Pubblicazione: 2018
Soggetti:
Accesso online:https://doi.org/10.4028/www.scientific.net/KEM.769.141
Natura: Elettronico Capitolo di libro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658639