Orbital angular momentum of channeling radiation from relativistic electrons in thin Si crystal; Physics Letters A; Vol. 382, iss. 42-43

Orbital angular momentum of channeling radiation from relativistic electrons in thin Si crystal; Physics Letters A; Vol. 382, iss. 42-43

Bibliographic Details
Parent link:	Physics Letters A Vol. 382, iss. 42-43.— 2018.— [P. 3141-3145]
Corporate Authors:	Национальный исследовательский Томский политехнический университет Школа базовой инженерной подготовки Отделение математики и информатики, Национальный исследовательский Томский политехнический университет Школа базовой инженерной подготовки Отделение естественных наук
Other Authors:	Abdrachitov S. V. Sergey Vladimirovich, Bogdanov O. V. Oleg Viktorovich, Kazinsky P. O. Petr Olegovich, Tukhfatullin T. A. Timur Ahatovich
Summary:	Title screen We propose to use channeling radiation (CR) from relativistic electrons as a source of high energy twisted photons in the MeV range. We calculate numerically the orbital angular momentum (OAM) of radiation produced by electrons with the energies MeV for the axial and planar channeling in the thin Si crystal. We obtain that the average OAM of CR in this case is approximately per photon with the photon energies about MeV. Режим доступа: по договору с организацией-держателем ресурса
Language:	English
Published:	2018
Subjects:	электронный ресурс труды учёных ТПУ релятивистские электроны излучение фотоны момент импульса электромагнитное поле
Online Access:	https://doi.org/10.1016/j.physleta.2018.07.044
Format:	Electronic Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658404

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