Orbital angular momentum of channeling radiation from relativistic electrons in thin Si crystal

Bibliografiset tiedot
Parent link:Physics Letters A
Vol. 382, iss. 42-43.— 2018.— [P. 3141-3145]
Yhteisötekijät: Национальный исследовательский Томский политехнический университет Школа базовой инженерной подготовки Отделение математики и информатики, Национальный исследовательский Томский политехнический университет Школа базовой инженерной подготовки Отделение естественных наук
Muut tekijät: Abdrachitov S. V. Sergey Vladimirovich, Bogdanov O. V. Oleg Viktorovich, Kazinsky P. O. Petr Olegovich, Tukhfatullin T. A. Timur Ahatovich
Yhteenveto:Title screen
We propose to use channeling radiation (CR) from relativistic electrons as a source of high energy twisted photons in the MeV range. We calculate numerically the orbital angular momentum (OAM) of radiation produced by electrons with the energies MeV for the axial and planar channeling in the thin Si crystal. We obtain that the average OAM of CR in this case is approximately per photon with the photon energies about MeV.
Режим доступа: по договору с организацией-держателем ресурса
Julkaistu: 2018
Aiheet:
Linkit:https://doi.org/10.1016/j.physleta.2018.07.044
Aineistotyyppi: Elektroninen Kirjan osa
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658404
Kuvaus
Yhteenveto:Title screen
We propose to use channeling radiation (CR) from relativistic electrons as a source of high energy twisted photons in the MeV range. We calculate numerically the orbital angular momentum (OAM) of radiation produced by electrons with the energies MeV for the axial and planar channeling in the thin Si crystal. We obtain that the average OAM of CR in this case is approximately per photon with the photon energies about MeV.
Режим доступа: по договору с организацией-держателем ресурса
DOI:10.1016/j.physleta.2018.07.044