Orbital angular momentum of channeling radiation from relativistic electrons in thin Si crystal
| Parent link: | Physics Letters A Vol. 382, iss. 42-43.— 2018.— [P. 3141-3145] |
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| Yhteisötekijät: | , |
| Muut tekijät: | , , , |
| Yhteenveto: | Title screen We propose to use channeling radiation (CR) from relativistic electrons as a source of high energy twisted photons in the MeV range. We calculate numerically the orbital angular momentum (OAM) of radiation produced by electrons with the energies MeV for the axial and planar channeling in the thin Si crystal. We obtain that the average OAM of CR in this case is approximately per photon with the photon energies about MeV. Режим доступа: по договору с организацией-держателем ресурса |
| Julkaistu: |
2018
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| Aiheet: | |
| Linkit: | https://doi.org/10.1016/j.physleta.2018.07.044 |
| Aineistotyyppi: | Elektroninen Kirjan osa |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658404 |
| Yhteenveto: | Title screen We propose to use channeling radiation (CR) from relativistic electrons as a source of high energy twisted photons in the MeV range. We calculate numerically the orbital angular momentum (OAM) of radiation produced by electrons with the energies MeV for the axial and planar channeling in the thin Si crystal. We obtain that the average OAM of CR in this case is approximately per photon with the photon energies about MeV. Режим доступа: по договору с организацией-держателем ресурса |
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| DOI: | 10.1016/j.physleta.2018.07.044 |