Influence of color centers on the luminescent response of radiation-damaged CsI: Tl crystal; Functional Materials; Vol. 25, No. 1

Influence of color centers on the luminescent response of radiation-damaged CsI: Tl crystal

Bibliographic Details
Parent link:Functional Materials
Vol. 25, No. 1.— 2018.— [P. 13-20]
Corporate Author: Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Отделение материаловедения
Other Authors: Yakovlev V. Yu. Viktor Yurjevich, Trefilova L. N. Larisa Nikolaevna, Alekseev V. A. Vadim Aleksandrovich, Karnaukhova A. A. Anna Alekseevna, Shpilinskaya O. V. Olga Viktorovna, Lebedinsky A. M. Aleksey Mikhaylovich, Tarakhno O. Aleksey Mikhaylovich
Summary:Title screen
Luminescence properties of Tl0va+ and Tl+vc- color centers induced by irradiation in CsI:Tl crystal are studied within a temperature range of 80-300 K. It is found, that electron Tl0va+ and hole Tl+vc- color centers arising due to radiation damage do not reduce conversion efficiency of CsI:Tl crystal, but participate in scintillation process to get energy from Tl+ centers by resonance. Degradation of the light yield of the irradiated CsI:Tl crystal is caused by the radiative energy transfer from Tl+ to Tl0va+ centers, whose emission is quenched at temperature above 210 K. Non-radiative energy transfer from Tl+to Tl+vc- centers results in long-wave spectral shift and the duration increase of the scintillation pulse.
Language:English
Published: 2018
Subjects:
электронный ресурс
труды учёных ТПУ
йодиды
ущерб
люминесценция
передача энергии
Online Access:http://earchive.tpu.ru/handle/11683/64799
https://doi.org/10.15407/fm25.01.013
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658237

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