Influence of color centers on the luminescent response of radiation-damaged CsI: Tl crystal; Functional Materials; Vol. 25, No. 1
| Parent link: | Functional Materials Vol. 25, No. 1.— 2018.— [P. 13-20] |
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| Institution som forfatter: | |
| Andre forfattere: | , , , , , , |
| Summary: | Title screen Luminescence properties of Tl0va+ and Tl+vc- color centers induced by irradiation in CsI:Tl crystal are studied within a temperature range of 80-300 K. It is found, that electron Tl0va+ and hole Tl+vc- color centers arising due to radiation damage do not reduce conversion efficiency of CsI:Tl crystal, but participate in scintillation process to get energy from Tl+ centers by resonance. Degradation of the light yield of the irradiated CsI:Tl crystal is caused by the radiative energy transfer from Tl+ to Tl0va+ centers, whose emission is quenched at temperature above 210 K. Non-radiative energy transfer from Tl+to Tl+vc- centers results in long-wave spectral shift and the duration increase of the scintillation pulse. |
| Sprog: | engelsk |
| Udgivet: |
2018
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| Fag: | |
| Online adgang: | http://earchive.tpu.ru/handle/11683/64799 https://doi.org/10.15407/fm25.01.013 |
| Format: | Electronisk Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658237 |