Influence of color centers on the luminescent response of radiation-damaged CsI: Tl crystal

Bibliografische gegevens
Parent link:Functional Materials
Vol. 25, No. 1.— 2018.— [P. 13-20]
Coauteur: Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Отделение материаловедения
Andere auteurs: Yakovlev V. Yu. Viktor Yurjevich, Trefilova L. N. Larisa Nikolaevna, Alekseev V. A. Vadim Aleksandrovich, Karnaukhova A. A. Anna Alekseevna, Shpilinskaya O. V. Olga Viktorovna, Lebedinsky A. M. Aleksey Mikhaylovich, Tarakhno O. Aleksey Mikhaylovich
Samenvatting:Title screen
Luminescence properties of Tl0va+ and Tl+vc- color centers induced by irradiation in CsI:Tl crystal are studied within a temperature range of 80-300 K. It is found, that electron Tl0va+ and hole Tl+vc- color centers arising due to radiation damage do not reduce conversion efficiency of CsI:Tl crystal, but participate in scintillation process to get energy from Tl+ centers by resonance. Degradation of the light yield of the irradiated CsI:Tl crystal is caused by the radiative energy transfer from Tl+ to Tl0va+ centers, whose emission is quenched at temperature above 210 K. Non-radiative energy transfer from Tl+to Tl+vc- centers results in long-wave spectral shift and the duration increase of the scintillation pulse.
Taal:Engels
Gepubliceerd in: 2018
Onderwerpen:
Online toegang:http://earchive.tpu.ru/handle/11683/64799
https://doi.org/10.15407/fm25.01.013
Formaat: Elektronisch Hoofdstuk
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658237

MARC

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200 1 |a Influence of color centers on the luminescent response of radiation-damaged CsI: Tl crystal  |f V. Yu. Yakovlev [et al.] 
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320 |a [References: 19 tit.] 
330 |a Luminescence properties of Tl0va+ and Tl+vc- color centers induced by irradiation in CsI:Tl crystal are studied within a temperature range of 80-300 K. It is found, that electron Tl0va+ and hole Tl+vc- color centers arising due to radiation damage do not reduce conversion efficiency of CsI:Tl crystal, but participate in scintillation process to get energy from Tl+ centers by resonance. Degradation of the light yield of the irradiated CsI:Tl crystal is caused by the radiative energy transfer from Tl+ to Tl0va+ centers, whose emission is quenched at temperature above 210 K. Non-radiative energy transfer from Tl+to Tl+vc- centers results in long-wave spectral shift and the duration increase of the scintillation pulse. 
461 |t Functional Materials 
463 |t Vol. 25, No. 1  |v [P. 13-20]  |d 2018 
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701 1 |a Trefilova  |b L. N.  |g Larisa Nikolaevna 
701 1 |a Alekseev  |b V. A.  |g Vadim Aleksandrovich 
701 1 |a Karnaukhova  |b A. A.  |c specialist in the field of lightning engineering  |c Assistant, Associate Professor of Tomsk Polytechnic University  |f 1983-  |g Anna Alekseevna  |3 (RuTPU)RU\TPU\pers\37830  |9 20534 
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