Size effect in AlN/SiN multilayered films irradiated with helium and argon ions; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 435

Bibliographic Details
Parent link:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 435.— 2018.— [8 p.]
Corporate Authors:	Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов, Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Научно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий"
Other Authors:	Uglov V. V. Vladimir Vasilievich, Kvasov N. T. Nikolay Trafimovich, Remnev G. E. Gennady Efimovich, Shimanskii V. I. Vitali Igorevich, Korenevsky E. L. Egor Leonidovich, Zlotsky S. V. Sergey Vladimirovich, Abadias G. Gregory, O'Connell J. H. Jacques Herman, van Vuuren A. J. Arno Janse
Summary:	Title screen The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10?nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30?keV) and argon (180?keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4?nm and grows up to 4–5?nm after the post-irradiation vacuum (800?°C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects. Режим доступа: по договору с организацией-держателем ресурса
Language:	English
Published:	2018
Subjects:	электронный ресурс труды учёных ТПУ многослойные пленки нитрид алюминия ионы гелия ионы аргона имплантация аморфные слои радиационные дефекты пузыри отжиг
Online Access:	https://doi.org/10.1016/j.nimb.2018.01.012
Format:	Electronic Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658132