Size effect in AlN/SiN multilayered films irradiated with helium and argon ions; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 435
| Parent link: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 435.— 2018.— [8 p.] |
|---|---|
| Autori kompanije: | , |
| Daljnji autori: | , , , , , , , , |
| Sažetak: | Title screen The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10?nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30?keV) and argon (180?keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4?nm and grows up to 4–5?nm after the post-irradiation vacuum (800?°C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects. Режим доступа: по договору с организацией-держателем ресурса |
| Jezik: | engleski |
| Izdano: |
2018
|
| Teme: | |
| Online pristup: | https://doi.org/10.1016/j.nimb.2018.01.012 |
| Format: | Elektronički Poglavlje knjige |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658132 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 658132 | ||
| 005 | 20250127161945.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\25253 | ||
| 090 | |a 658132 | ||
| 100 | |a 20180522d2018 k||y0engy50 ba | ||
| 101 | 0 | |a eng | |
| 102 | |a NL | ||
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Size effect in AlN/SiN multilayered films irradiated with helium and argon ions |f V. V. Uglov [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 15 tit.] | ||
| 330 | |a The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10?nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30?keV) and argon (180?keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4?nm and grows up to 4–5?nm after the post-irradiation vacuum (800?°C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | ||
| 463 | |t Vol. 435 |v [8 p.] |d 2018 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a многослойные пленки | |
| 610 | 1 | |a нитрид алюминия | |
| 610 | 1 | |a ионы гелия | |
| 610 | 1 | |a ионы аргона | |
| 610 | 1 | |a имплантация | |
| 610 | 1 | |a аморфные слои | |
| 610 | 1 | |a радиационные дефекты | |
| 610 | 1 | |a пузыри | |
| 610 | 1 | |a отжиг | |
| 701 | 1 | |a Uglov |b V. V. |c Physicist |c Leading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1954- |g Vladimir Vasilievich |3 (RuTPU)RU\TPU\pers\36737 | |
| 701 | 1 | |a Kvasov |b N. T. |c physicist |c leading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1949- |g Nikolay Trafimovich |3 (RuTPU)RU\TPU\pers\36768 | |
| 701 | 1 | |a Remnev |b G. E. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1948- |g Gennady Efimovich |3 (RuTPU)RU\TPU\pers\31500 | |
| 701 | 1 | |a Shimanskii |b V. I. |c Physicist |c Associate Scientist of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1986- |g Vitali Igorevich |3 (RuTPU)RU\TPU\pers\36738 | |
| 701 | 1 | |a Korenevsky |b E. L. |g Egor Leonidovich | |
| 701 | 1 | |a Zlotsky |b S. V. |g Sergey Vladimirovich | |
| 701 | 1 | |a Abadias |b G. |g Gregory | |
| 701 | 1 | |a O'Connell |b J. H. |g Jacques Herman | |
| 701 | 1 | |a van Vuuren |b A. J. |g Arno Janse | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Исследовательская школа физики высокоэнергетических процессов |c (2017- ) |3 (RuTPU)RU\TPU\col\23551 |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа новых производственных технологий |b Научно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий" |3 (RuTPU)RU\TPU\col\23502 |
| 801 | 2 | |a RU |b 63413507 |c 20190409 |g RCR | |
| 856 | 4 | |u https://doi.org/10.1016/j.nimb.2018.01.012 | |
| 942 | |c CF | ||