Size effect in AlN/SiN multilayered films irradiated with helium and argon ions; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 435
| Parent link: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 435.— 2018.— [8 p.] |
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| Institutionella upphovsmän: | , |
| Övriga upphovsmän: | , , , , , , , , |
| Sammanfattning: | Title screen The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10?nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30?keV) and argon (180?keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4?nm and grows up to 4–5?nm after the post-irradiation vacuum (800?°C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects. Режим доступа: по договору с организацией-держателем ресурса |
| Språk: | engelska |
| Publicerad: |
2018
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| Ämnen: | |
| Länkar: | https://doi.org/10.1016/j.nimb.2018.01.012 |
| Materialtyp: | Elektronisk Bokavsnitt |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658132 |
| Sammanfattning: | Title screen The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10?nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30?keV) and argon (180?keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4?nm and grows up to 4–5?nm after the post-irradiation vacuum (800?°C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects. Режим доступа: по договору с организацией-держателем ресурса |
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| DOI: | 10.1016/j.nimb.2018.01.012 |