Blister formation in ZrN/SiN multilayers after He irradiation
| Parent link: | Surface and Coatings Technology Vol. 334.— 2018.— [P. 170-176] |
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| Collectivité auteur: | |
| Autres auteurs: | , , , , , |
| Résumé: | Title screen The work is dedicated to the investigation of blister formation in ZrN/SiNx multilayer films irradiated with He ions (30?keV) and annealed in a vacuum at 600?°C. Multilayer films were prepared by reactive magnetron sputter-deposition on Si wafers under Ar?+?N2 plasma discharges. ZrN/SiNx films were deposited by sequential sputtering from elemental Zr and Si3N4 targets at substrate temperature of 300?°C, with ZrN and SiNx layer thickness varying from 2 to 10?nm. According to transmission electron microscopy (TEM), the multilayer films consist of nanocrystalline (002)-oriented ZrN and amorphous SiNx layers. Surface morphology changes of ZrN/SiNx films irradiated with He ions (30?keV) and annealed in a vacuum at 600?°C were studied by scanning electron (SEM) and atomic-force microscopy (AFM) methods. It has been found that under He ions (30?keV) irradiation ZrN/SiNx multilayer films remain resistant to blistering and flaking up to fluence of 8·1016?cm?2. The investigations have shown influence of the crystalline and amorphous layer thicknesses on the character and damage degree of the multilayer films surface as a result of post-radiation annealing at 600?°C. In this work potential processes (mechanisms) of blister formation and flacking in ZrN/SiNx multilayer systems are discussed. Режим доступа: по договору с организацией-держателем ресурса |
| Langue: | anglais |
| Publié: |
2018
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| Sujets: | |
| Accès en ligne: | https://doi.org/10.1016/j.surfcoat.2018.02.095 |
| Format: | Électronique Chapitre de livre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658105 |
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| 200 | 1 | |a Blister formation in ZrN/SiN multilayers after He irradiation |f V. V. Uglov [et al.] | |
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| 300 | |a Title screen | ||
| 320 | |a [References: 30 tit.] | ||
| 330 | |a The work is dedicated to the investigation of blister formation in ZrN/SiNx multilayer films irradiated with He ions (30?keV) and annealed in a vacuum at 600?°C. Multilayer films were prepared by reactive magnetron sputter-deposition on Si wafers under Ar?+?N2 plasma discharges. ZrN/SiNx films were deposited by sequential sputtering from elemental Zr and Si3N4 targets at substrate temperature of 300?°C, with ZrN and SiNx layer thickness varying from 2 to 10?nm. According to transmission electron microscopy (TEM), the multilayer films consist of nanocrystalline (002)-oriented ZrN and amorphous SiNx layers. Surface morphology changes of ZrN/SiNx films irradiated with He ions (30?keV) and annealed in a vacuum at 600?°C were studied by scanning electron (SEM) and atomic-force microscopy (AFM) methods. It has been found that under He ions (30?keV) irradiation ZrN/SiNx multilayer films remain resistant to blistering and flaking up to fluence of 8·1016?cm?2. The investigations have shown influence of the crystalline and amorphous layer thicknesses on the character and damage degree of the multilayer films surface as a result of post-radiation annealing at 600?°C. In this work potential processes (mechanisms) of blister formation and flacking in ZrN/SiNx multilayer systems are discussed. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Surface and Coatings Technology | ||
| 463 | |t Vol. 334 |v [P. 170-176] |d 2018 | ||
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| 701 | 1 | |a Uglov |b V. V. |c Physicist |c Leading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1954- |g Vladimir Vasilievich |3 (RuTPU)RU\TPU\pers\36737 | |
| 701 | 1 | |a Abadias |b G. | |
| 701 | 1 | |a Zlotski |b S. V. | |
| 701 | 1 | |a Kvasov |b N. T. |c physicist |c leading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1949- |g Nikolay Trafimovich |3 (RuTPU)RU\TPU\pers\36768 | |
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| 701 | 1 | |a Malashevih |b А. А. | |
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