Features of microstructure of ZrN, Si3N4 and ZrN/SiNx nanoscale films irradiated by Xe ions; Vacuum; Vol. 143
| Parent link: | Vacuum Vol. 143.— 2017.— [P. 491-494] |
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| Autor Corporativo: | |
| Outros autores: | , , , , , , , , , |
| Summary: | Title screen The article reports on the TEM investigations of microstructure features after Xe irradiation (360 keV and 5 × 1016 cm−2) of ZrN, Si3N4 monolithic films and ZrN/SiNx multilayered film deposited by magnetron sputtering. Results of TEM study of ZrN nanocrystalline film, irradiated by Xe ions, have shown that this film seems to be almost unaffected by the implantation. Only a small amount of damage is observed. In SiNx amorphous film, irradiated by Xe ions, a lot of large (up to 40 nm) and small (∼5 nm) bubbles were found. The accumulation of implanted xenon (formation of large bubbles) at the depth corresponding to maximum radiation damage was revealed. In the case of multilayered film, it was found that the boundaries of crystalline ZrN-amorphous SiNx layers close to the implantation range have been smeared in zone of the maximum energy release for implanted ions. Small bubbles can be seen in SiNx amorphous layers while they are located in the middle of the layer. Режим доступа: по договору с организацией-держателем ресурса |
| Idioma: | inglés |
| Publicado: |
2017
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| Subjects: | |
| Acceso en liña: | https://doi.org/10.1016/j.vacuum.2017.03.015 |
| Formato: | Electrónico Capítulo de libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=657967 |
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| 200 | 1 | |a Features of microstructure of ZrN, Si3N4 and ZrN/SiNx nanoscale films irradiated by Xe ions |f V. V. Uglov [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 20 tit.] | ||
| 330 | |a The article reports on the TEM investigations of microstructure features after Xe irradiation (360 keV and 5 × 1016 cm−2) of ZrN, Si3N4 monolithic films and ZrN/SiNx multilayered film deposited by magnetron sputtering. Results of TEM study of ZrN nanocrystalline film, irradiated by Xe ions, have shown that this film seems to be almost unaffected by the implantation. Only a small amount of damage is observed. In SiNx amorphous film, irradiated by Xe ions, a lot of large (up to 40 nm) and small (∼5 nm) bubbles were found. The accumulation of implanted xenon (formation of large bubbles) at the depth corresponding to maximum radiation damage was revealed. In the case of multilayered film, it was found that the boundaries of crystalline ZrN-amorphous SiNx layers close to the implantation range have been smeared in zone of the maximum energy release for implanted ions. Small bubbles can be seen in SiNx amorphous layers while they are located in the middle of the layer. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Vacuum | ||
| 463 | |t Vol. 143 |v [P. 491-494] |d 2017 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a микроструктура | |
| 610 | 1 | |a магнетронное распыление | |
| 610 | 1 | |a ионное облучение | |
| 610 | 1 | |a пузырьки | |
| 701 | 1 | |a Uglov |b V. V. |c Physicist |c Leading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1954- |g Vladimir Vasilievich |3 (RuTPU)RU\TPU\pers\36737 | |
| 701 | 1 | |a Abadias |b G. | |
| 701 | 1 | |a Zlotski |b S. V. | |
| 701 | 1 | |a Saladukhin |b I. A. | |
| 701 | 1 | |a Safronov |b I. V. | |
| 701 | 1 | |a Shimanskii (Shymanski) |b V. I. |c Physicist |c Associate Scientist of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1986- |g Vitali Igorevich |3 (RuTPU)RU\TPU\pers\36738 | |
| 701 | 1 | |a Janse van Vuuren |b A. | |
| 701 | 1 | |a O'Connell |b J. | |
| 701 | 1 | |a Skuratov |b V. | |
| 701 | 1 | |a Neethling |b J. H. | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Исследовательская школа физики высокоэнергетических процессов |c (2017- ) |3 (RuTPU)RU\TPU\col\23551 |
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| 856 | 4 | |u https://doi.org/10.1016/j.vacuum.2017.03.015 | |
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