Influence of a high-power pulsed ion beam on the mechanical properties of corundum ceramics; IOP Conference Series: Materials Science and Engineering; Vol. 289 : Modern Technologies for Non-Destructive Testing
| Parent link: | IOP Conference Series: Materials Science and Engineering Vol. 289 : Modern Technologies for Non-Destructive Testing.— 2018.— [012019, 7 p.] |
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| المؤلف الرئيسي: | |
| مؤلفون مشاركون: | , |
| مؤلفون آخرون: | , |
| الملخص: | Title screen The mechanical properties of near-surface layers of corundum ceramics treated by high-power pulsed ion beam of carbon are investigated. The samples for investigation were prepared from corundum substrate, which is usually used in microelectronic. The ion treatment was carried out at the TEMP-4M facility under the following conditions: an accelerating voltage of 160-200 keV, the current density in the pulse varied within 15-85 A/cm{2} . It was found that ion irradiation changes the structure and properties of near-surface layers of corundum ceramics. At the same time, melting and erosion of the surface layer takes place. These processes are accompanied by the formation of a network of microcracks. Microcracks are propagated only by the depth of melting layer. The mechanical properties were measured using a NanoTest600 nanohardness testing instrument. It was found that the nanohardness depends of the treatment modes. At a current density of 15A/cm{2} , with an increase treatment dose, the nanohardness of the irradiated surface layer increases in comparison with the initial value before irradiation. At higher current densities, the nanohardness of irradiated ceramics decreases relatively to the initial value before irradiation. The dependences of nanohardness off the irradiation dose in this case have the view of a curves with a minimum at irradiation doses of 2.5∙1014 and 1.3∙1014 cm{-2} , for current densities of 50 and 85 A/cm{2} , respectively. |
| اللغة: | الإنجليزية |
| منشور في: |
2018
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://dx.doi.org/10.1088/1757-899X/289/1/012019 http://earchive.tpu.ru/handle/11683/47015 |
| التنسيق: | الكتروني فصل الكتاب |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=657676 |
MARC
| LEADER | 00000nla2a2200000 4500 | ||
|---|---|---|---|
| 001 | 657676 | ||
| 005 | 20231229142601.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\24328 | ||
| 035 | |a RU\TPU\network\24327 | ||
| 090 | |a 657676 | ||
| 100 | |a 20180305a2018 k y0engy50 ba | ||
| 101 | 0 | |a eng | |
| 102 | |a GB | ||
| 105 | |a y z 100zy | ||
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Influence of a high-power pulsed ion beam on the mechanical properties of corundum ceramics |f V. Kostenko, S. K. Pavlov, S. A. Nikolaeva | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 36 tit.] | ||
| 330 | |a The mechanical properties of near-surface layers of corundum ceramics treated by high-power pulsed ion beam of carbon are investigated. The samples for investigation were prepared from corundum substrate, which is usually used in microelectronic. The ion treatment was carried out at the TEMP-4M facility under the following conditions: an accelerating voltage of 160-200 keV, the current density in the pulse varied within 15-85 A/cm{2} . It was found that ion irradiation changes the structure and properties of near-surface layers of corundum ceramics. At the same time, melting and erosion of the surface layer takes place. These processes are accompanied by the formation of a network of microcracks. Microcracks are propagated only by the depth of melting layer. The mechanical properties were measured using a NanoTest600 nanohardness testing instrument. It was found that the nanohardness depends of the treatment modes. At a current density of 15A/cm{2} , with an increase treatment dose, the nanohardness of the irradiated surface layer increases in comparison with the initial value before irradiation. At higher current densities, the nanohardness of irradiated ceramics decreases relatively to the initial value before irradiation. The dependences of nanohardness off the irradiation dose in this case have the view of a curves with a minimum at irradiation doses of 2.5∙1014 and 1.3∙1014 cm{-2} , for current densities of 50 and 85 A/cm{2} , respectively. | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\2008 |t IOP Conference Series: Materials Science and Engineering | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\24148 |t Vol. 289 : Modern Technologies for Non-Destructive Testing |o 6th International Conference, 9–14 October 2017, Tomsk, Russian Federation |o [proceedings] |v [012019, 7 p.] |d 2018 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a мощные пучки | |
| 610 | 1 | |a импульсные пучки | |
| 610 | 1 | |a ионные пучки | |
| 610 | 1 | |a механические свойства | |
| 610 | 1 | |a корундовая керамика | |
| 610 | 1 | |a приповерхностные слои | |
| 610 | 1 | |a микроэлектроника | |
| 610 | 1 | |a микротрещины | |
| 610 | 1 | |a нанотвердость | |
| 610 | 1 | |a облучение | |
| 700 | 1 | |a Kostenko |b V. |c specialist in the field of electrical engineering |c laboratory assistant researcher of Tomsk Polytechnic University |f 1994- |g Valeriya |3 (RuTPU)RU\TPU\pers\42079 | |
| 701 | 1 | |a Pavlov |b S. K. |c physicist |c Engineer of Tomsk Polytechnic University |f 1990- |g Sergey Konstantinovich |3 (RuTPU)RU\TPU\pers\32875 | |
| 701 | 1 | |a Nikolaeva |b S. A. |c specialist in the field of electrical engineering |c Laboratory assistant researcher of Tomsk Polytechnic University |f 1990- |g Svetlana Andreevna |3 (RuTPU)RU\TPU\pers\37341 |9 20260 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Исследовательская школа физики высокоэнергетических процессов |c (2017- ) |3 (RuTPU)RU\TPU\col\23551 |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Институт неразрушающего контроля (ИНК) |b Проблемная научно-исследовательская лаборатория электроники, диэлектриков и полупроводников (ПНИЛ ЭДиП) |3 (RuTPU)RU\TPU\col\19033 |
| 801 | 2 | |a RU |b 63413507 |c 20191212 |g RCR | |
| 856 | 4 | |u http://dx.doi.org/10.1088/1757-899X/289/1/012019 | |
| 856 | 4 | |u http://earchive.tpu.ru/handle/11683/47015 | |
| 942 | |c CF | ||