Integrated microelectromechanical gyroscope under shock loads; IOP Conference Series: Materials Science and Engineering; Vol. 289 : Modern Technologies for Non-Destructive Testing
| Parent link: | IOP Conference Series: Materials Science and Engineering Vol. 289 : Modern Technologies for Non-Destructive Testing.— 2018.— [012003, 7 p.] |
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| Samenvatting: | Title screen The paper presents a new design of a shock-proof two-axis microelectromechanical gyroscope. Without stoppers, the shock load enables the interaction between the silicon sensor elements. Stoppers were installed in the gyroscope to prevent the contact interaction between electrodes and spring elements with fixed part of the sensor. The contact of stoppers occurs along the plane, thereby preventing the system from serious contact stresses. The shock resistance of the gyroscope is improved by the increase in its eigenfrequency at which the contact interaction does not occur. It is shown that the shock load directed along one axis does not virtually cause the movement of sensing elements along the crosswise axes. Maximum stresses observed in the proposed gyroscope at any loading direction do not exceed the value allowable for silicon. |
| Taal: | Engels |
| Gepubliceerd in: |
2018
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| Online toegang: | http://dx.doi.org/10.1088/1757-899X/289/1/012003 http://earchive.tpu.ru/handle/11683/47008 |
| Formaat: | Elektronisch Hoofdstuk |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=657666 |
| Samenvatting: | Title screen The paper presents a new design of a shock-proof two-axis microelectromechanical gyroscope. Without stoppers, the shock load enables the interaction between the silicon sensor elements. Stoppers were installed in the gyroscope to prevent the contact interaction between electrodes and spring elements with fixed part of the sensor. The contact of stoppers occurs along the plane, thereby preventing the system from serious contact stresses. The shock resistance of the gyroscope is improved by the increase in its eigenfrequency at which the contact interaction does not occur. It is shown that the shock load directed along one axis does not virtually cause the movement of sensing elements along the crosswise axes. Maximum stresses observed in the proposed gyroscope at any loading direction do not exceed the value allowable for silicon. |
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| DOI: | 10.1088/1757-899X/289/1/012003 |