GaSe oxidation in air: from bulk to monolayers

GaSe oxidation in air: from bulk to monolayers

Bibliographic Details
Parent link:Semiconductor Science and Technology.— , 1986-
Vol. 32, iss. 10.— 2017.— [9 p.]
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра лазерной и световой техники (ЛиСТ)
Other Authors: Rahaman M. Manfujur, Rodriguez (Rodriges) Contreras R. D. Raul David, Monecke M. Manuel, Lopez-Rivera S. A. Santos Adan, Zahn D. R. T. Dietrich
Summary:Title screen
Two-dimensional (2D) van derWaals semiconductors have been the subject of intense research due to their low dimensionality and tunable optoelectronic properties. However, the stability of these materials in air is one of the important issues that needs to be clarified, especially for technological applications. Here the time evolution of GaSe oxidation from monolayer to bulk is investigated by Raman spectroscopy, photoluminescence emission, and x-ray photoelectron spectroscopy. The Raman spectroscopy study reveals that GaSe monolayers become oxidized almost immediately after exposure to air. However, the oxidation is a self-limiting process taking roughly 5 h to penetrate up to 3 layers of GaSe. After oxidation, GaSe single-layers decompose into amorphous Se which has a strong Raman cross section under red excitation. The present study provides a clear picture of the stability of GaSe in air and will guide future research of GaSe from single- to few-layers for the appropriate development of novel technological applications for this promising 2D material.
Режим доступа: по договору с организацией-держателем ресурса
Published: 2017
Subjects:
электронный ресурс
труды учёных ТПУ
монохалькогениды
полупроводники
2D
экологическая стабильность
рамановская спектроскопия
GaSe
monochalcogenides
2D semiconductor
environmental stability
Raman spectroscopy
Online Access:https://doi.org/10.1088/1361-6641/aa8441
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=657445

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