Highly Localized Strain in a MoS2/Au Heterostructure Revealed by Tip-Enhanced Raman Spectroscopy; Nano Letters; Vol. 17, iss. 10

Sonraí bibleagrafaíochta
Parent link:Nano Letters.— , 2001-
Vol. 17, iss. 10.— 2017.— [P. 6027–6033]
Údar corparáideach: Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра лазерной и световой техники (ЛиСТ)
Rannpháirtithe: Rahaman M. Manfujur, Rodriguez (Rodriges) Contreras R. D. Raul David, Plechinger G. Gerd, Moras S. Stefan, Schuller Ch. Christian, Korn T. Tobias, Zahn D. R. T. Dietrich
Achoimre:Title screen
Tip-enhanced Raman spectroscopy (TERS) has been rapidly improved over the past decade and opened up opportunities to study phonon properties of materials at the nanometer scale. In this Letter, we report on TERS of an ultrathin MoS2 flake on a nanostructured Au on silicon surface forming a two-dimensional (2D) crystal/plasmonic heterostructure. Au nanostructures (shaped in triangles) are prepared by nanosphere lithography, and then MoS2 is mechanically exfoliated on top of them. The TERS spectra acquired under resonance conditions at 638 nm excitation wavelength evidence strain changes spatially localized to regions as small as 25 nm in TERS imaging. We observe the highest Raman intensity enhancement for MoS2 on top of Au nanotriangles due to the strong electromagnetic confinement between the tip and a single triangle. Our results enable us to determine the local strain in MoS2 induced during heterostructure formation. The maximum frequency shift of E2g mode is determined to be (4.2 ± 0.8) cm–1, corresponding to 1.4% of biaxial strain induced in the MoS2 layer. We find that the regions of maximum local strain correspond to the regions of maximum topographic curvature as extracted from atomic force microscopy measurements. This tip-enhanced Raman spectroscopy study allows us to determine the built-in strain that arises when 2D materials interact with other nanostructures.
Режим доступа: по договору с организацией-держателем ресурса
Teanga:Béarla
Foilsithe / Cruthaithe: 2017
Ábhair:
Rochtain ar líne:https://doi.org/10.1021/acs.nanolett.7b02322
Formáid: Leictreonach Caibidil leabhair
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=657440

MARC

LEADER 00000naa0a2200000 4500
001 657440
005 20250517101713.0
035 |a (RuTPU)RU\TPU\network\23960 
035 |a RU\TPU\network\23848 
090 |a 657440 
100 |a 20180205d2017 k||y0engy50 ba 
101 0 |a eng 
135 |a drcn ---uucaa 
181 0 |a i  
182 0 |a b 
200 1 |a Highly Localized Strain in a MoS2/Au Heterostructure Revealed by Tip-Enhanced Raman Spectroscopy  |f M. Rahaman [et al.] 
203 |a Text  |c electronic 
300 |a Title screen 
330 |a Tip-enhanced Raman spectroscopy (TERS) has been rapidly improved over the past decade and opened up opportunities to study phonon properties of materials at the nanometer scale. In this Letter, we report on TERS of an ultrathin MoS2 flake on a nanostructured Au on silicon surface forming a two-dimensional (2D) crystal/plasmonic heterostructure. Au nanostructures (shaped in triangles) are prepared by nanosphere lithography, and then MoS2 is mechanically exfoliated on top of them. The TERS spectra acquired under resonance conditions at 638 nm excitation wavelength evidence strain changes spatially localized to regions as small as 25 nm in TERS imaging. We observe the highest Raman intensity enhancement for MoS2 on top of Au nanotriangles due to the strong electromagnetic confinement between the tip and a single triangle. Our results enable us to determine the local strain in MoS2 induced during heterostructure formation. The maximum frequency shift of E2g mode is determined to be (4.2 ± 0.8) cm–1, corresponding to 1.4% of biaxial strain induced in the MoS2 layer. We find that the regions of maximum local strain correspond to the regions of maximum topographic curvature as extracted from atomic force microscopy measurements. This tip-enhanced Raman spectroscopy study allows us to determine the built-in strain that arises when 2D materials interact with other nanostructures. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
461 |t Nano Letters  |d 2001- 
463 |t Vol. 17, iss. 10  |v [P. 6027–6033]  |d 2017 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a плазмоника 
610 1 |a напряжение 
610 1 |a рамановская спектроскопия 
610 1 |a дихалькогениды 
610 1 |a двумерные материалы 
610 1 |a MoS2 
610 1 |a plasmonics 
610 1 |a strain 
610 1 |a Tip-enhanced Raman spectroscopy 
610 1 |a transition metal dichalcogenides 
610 1 |a two-dimensional materials 
701 1 |a Rahaman  |b M.  |g Manfujur 
701 1 |a Rodriguez (Rodriges) Contreras  |b R. D.  |c Venezuelan physicist, doctor of science  |c Professor of Tomsk Polytechnic University  |f 1982-  |g Raul David  |3 (RuTPU)RU\TPU\pers\39942  |9 21179 
701 1 |a Plechinger  |b G.  |g Gerd 
701 1 |a Moras  |b S.  |g Stefan 
701 1 |a Schuller  |b Ch.  |g Christian 
701 1 |a Korn  |b T.  |g Tobias 
701 1 |a Zahn  |b D. R. T.  |g Dietrich 
712 0 2 |a Национальный исследовательский Томский политехнический университет (ТПУ)  |b Институт физики высоких технологий (ИФВТ)  |b Кафедра лазерной и световой техники (ЛиСТ)  |3 (RuTPU)RU\TPU\col\18690 
801 2 |a RU  |b 63413507  |c 20180312  |g RCR 
850 |a 63413507 
856 4 |u https://doi.org/10.1021/acs.nanolett.7b02322 
942 |c CF