Hydrogenation behavior of Ti-implanted Zr-1Nb alloy with TiN films deposited using filtered vacuum arc and magnetron sputtering

Podrobná bibliografie
Parent link:Applied Surface Science
Vol. 432, Pt. B.— 2018.— [P. 207-213]
Korporativní autor: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра общей физики (ОФ)
Další autoři: Kashkarov E. B. Egor Borisovich, Nikitenkov N. N. Nikolai Nikolaevich, Sutygina A. N. Alina Nikolaevna, Bezmaternykh A. O. Anna Olegovna, Kudiyarov V. N. Victor Nikolaevich, Syrtanov M. S. Maksim Sergeevich, Pryamushko T. S. Tatjyana Sergeevna
Shrnutí:Title screen
More than 60 years of operation of water-cooled reactors have shown that local or general critical hydrogen concentration is one of the basic limiting criteria of zirconium-based fuel element claddings. During the coolant radiolysis, released hydrogen penetrates and accumulates in zirconium alloys. Hydrogenation of zirconium alloys leads to degradation of their mechanical properties, hydride cracking and stress corrosion cracking. In this research the effect of titanium nitride (TiN) deposition on hydrogenation behavior of Ti-implanted Zr-1Nb alloy was described. Ti-implanted interlayer was fabricated by plasma immersion ion implantation (PIII) at the pulsed bias voltage of 1500V to improve the adhesion of TiN and reduce hydrogen penetration into Zr-1Nb alloy. We conducted the comparative analysis on hydrogenation behavior of the Ti-implanted alloy with sputtered and evaporated TiN films by reactive dc magnetron sputtering (dcMS) and filtered cathodic vacuum arc deposition (FVAD), respectively. The crystalline structure and surface morphology were investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The elemental distribution was analyzed using glow-discharge optical emission spectroscopy (GD-OES). Hydrogenation was performed from gas atmosphere at 350 ◦C and 2 atm hydrogen pressure. The results revealed that TiN films as well as Ti implantation significantly reduce hydrogen absorption rate of Zr-1Nb alloy. The best performance to reduce the rate of hydrogen absorption is Ti-implanted layer with evaporated TiN film. Morphology of the films impacted hydrogen permeation through TiN films: the denser film the lower hydrogen permeation.
Режим доступа: по договору с организацией-держателем ресурса
Vydáno: 2018
Témata:
On-line přístup:https://doi.org/10.1016/j.apsusc.2017.04.035
Médium: Elektronický zdroj Kapitola
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=657354

MARC

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200 1 |a Hydrogenation behavior of Ti-implanted Zr-1Nb alloy with TiN films deposited using filtered vacuum arc and magnetron sputtering  |f E. B. Kashkarov [et al.] 
203 |a Text  |c electronic 
300 |a Title screen 
320 |a [References: p. 213 (48 tit.)] 
330 |a More than 60 years of operation of water-cooled reactors have shown that local or general critical hydrogen concentration is one of the basic limiting criteria of zirconium-based fuel element claddings. During the coolant radiolysis, released hydrogen penetrates and accumulates in zirconium alloys. Hydrogenation of zirconium alloys leads to degradation of their mechanical properties, hydride cracking and stress corrosion cracking. In this research the effect of titanium nitride (TiN) deposition on hydrogenation behavior of Ti-implanted Zr-1Nb alloy was described. Ti-implanted interlayer was fabricated by plasma immersion ion implantation (PIII) at the pulsed bias voltage of 1500V to improve the adhesion of TiN and reduce hydrogen penetration into Zr-1Nb alloy. We conducted the comparative analysis on hydrogenation behavior of the Ti-implanted alloy with sputtered and evaporated TiN films by reactive dc magnetron sputtering (dcMS) and filtered cathodic vacuum arc deposition (FVAD), respectively. The crystalline structure and surface morphology were investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The elemental distribution was analyzed using glow-discharge optical emission spectroscopy (GD-OES). Hydrogenation was performed from gas atmosphere at 350 ◦C and 2 atm hydrogen pressure. The results revealed that TiN films as well as Ti implantation significantly reduce hydrogen absorption rate of Zr-1Nb alloy. The best performance to reduce the rate of hydrogen absorption is Ti-implanted layer with evaporated TiN film. Morphology of the films impacted hydrogen permeation through TiN films: the denser film the lower hydrogen permeation. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
461 |t Applied Surface Science 
463 |t Vol. 432, Pt. B  |v [P. 207-213]  |d 2018 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a zirconium 
610 1 |a titanium 
610 1 |a hydrogenation 
610 1 |a hydrogen 
610 1 |a spectroscopy 
610 1 |a цирконий 
610 1 |a титан 
610 1 |a гидрирование 
610 1 |a водород 
610 1 |a спектроскопия 
701 1 |a Kashkarov  |b E. B.  |c Physicist  |c Associate Professor, Researcher of Tomsk Polytechnic University, Candidate of Physical and Mathematical Sciences  |f 1991-  |g Egor Borisovich  |3 (RuTPU)RU\TPU\pers\34949  |9 18267 
701 1 |a Nikitenkov  |b N. N.  |c Russian physicist  |c Professor of Tomsk Polytechnic University, Doctor of Physical and Mathematical Sciences  |f 1953-  |g Nikolai Nikolaevich  |3 (RuTPU)RU\TPU\pers\30409 
701 1 |a Sutygina  |b A. N.  |c Physicist  |c Technician of Tomsk Polytechnic University  |f 1993-  |g Alina Nikolaevna  |3 (RuTPU)RU\TPU\pers\37677  |9 20482 
701 1 |a Bezmaternykh  |b A. O.  |c specialist in the field of instrument engineering  |c engineer of Tomsk Polytechnic University  |f 1990-  |g Anna Olegovna  |3 (RuTPU)RU\TPU\pers\37179 
701 1 |a Kudiyarov  |b V. N.  |c physicist  |c Associate Professor of Tomsk Polytechnic University, Candidate of Technical Sciences  |f 1990-  |g Victor Nikolaevich  |y Tomsk  |3 (RuTPU)RU\TPU\pers\30836  |9 15083 
701 1 |a Syrtanov  |b M. S.  |c physicist  |c Associate Professor, Researcher of Tomsk Polytechnic University, Candidate of Technical Sciences  |f 1990-  |g Maksim Sergeevich  |3 (RuTPU)RU\TPU\pers\34764  |9 18114 
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