Setup for laboratory studies of the environmental conditions influence on the fixed charge state in silicon dioxide; Journal of Instrumentation; Vol. 10 : Position Sensitive Detectors
| Parent link: | Journal of Instrumentation Vol. 10 : Position Sensitive Detectors.— 2015.— [C02045, 8 р.] |
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| Autor principal: | |
| Autor Corporativo: | |
| Outros Autores: | , |
| Resumo: | Title screen The position sensitive detectors operate in high intensity radiation field of the collider experiment [1]. Important task is to estimate the influence of different radiation effects on properties of the detector. We focus on the laboratory studies to estimate the reliability of different types of silicon detectors. We use the simple test structures produced by standard technology for the silicon detectors. We give the primary attention to the case when the depth of active detector region varies from 10 to 20 µm because it leads to the most significant influence of SiO2-Si interface on processes in silicon bulk. We present the experimental results of long term irradiation test with Am241 (one year). Influence of the environmental conditions on the fixed charge states in silicon dioxide was investigated using developed simple model. |
| Idioma: | inglês |
| Publicado em: |
2015
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| Assuntos: | |
| Acesso em linha: | https://doi.org/10.1088/1748-0221/10/02/C02045 |
| Formato: | Recurso Eletrônico Capítulo de Livro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=656518 |
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| 200 | 1 | |a Setup for laboratory studies of the environmental conditions influence on the fixed charge state in silicon dioxide |f S. Kushpil, V. Kushpil, V. S. Mikhaylov | |
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| 300 | |a Title screen | ||
| 320 | |a [Reference: 6 tit.] | ||
| 330 | |a The position sensitive detectors operate in high intensity radiation field of the collider experiment [1]. Important task is to estimate the influence of different radiation effects on properties of the detector. We focus on the laboratory studies to estimate the reliability of different types of silicon detectors. We use the simple test structures produced by standard technology for the silicon detectors. We give the primary attention to the case when the depth of active detector region varies from 10 to 20 µm because it leads to the most significant influence of SiO2-Si interface on processes in silicon bulk. We present the experimental results of long term irradiation test with Am241 (one year). Influence of the environmental conditions on the fixed charge states in silicon dioxide was investigated using developed simple model. | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\25113 |t Journal of Instrumentation | |
| 463 | |t Vol. 10 : Position Sensitive Detectors |o 10th International conference, 7-12 September, 2014 |v [C02045, 8 р.] |d 2015 | ||
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