Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices; Russian Physics Journal; Vol. 59, iss. 9
| Parent link: | Russian Physics Journal Vol. 59, iss. 9.— 2017.— [P. 1417-1424] |
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| Autor Corporativo: | |
| Outros autores: | , , , , , , , |
| Summary: | Title screen In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge-Sb-Te system of compositions GeSb4Te7 (GST147), GeSb2Te4 (GST124), and Ge2Sb2Te5 (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. Режим доступа: по договору с организацией-держателем ресурса |
| Idioma: | inglés |
| Publicado: |
2017
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| Subjects: | |
| Acceso en liña: | https://doi.org/10.1007/s11182-017-0925-x |
| Formato: | MixedMaterials Electrónico Capítulo de libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=656062 |
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| 200 | 1 | |a Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices |f P. I. Lazarenko [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 1423-1424 (25 tit.)] | ||
| 330 | |a In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge-Sb-Te system of compositions GeSb4Te7 (GST147), GeSb2Te4 (GST124), and Ge2Sb2Te5 (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Russian Physics Journal | ||
| 463 | |t Vol. 59, iss. 9 |v [P. 1417-1424] |d 2017 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a phase change memory | |
| 610 | 1 | |a temperature dependences of the resistivity | |
| 610 | 1 | |a current-voltage characteristics | |
| 610 | 1 | |a energy diagram | |
| 610 | 1 | |a GST147 | |
| 610 | 1 | |a GST124 | |
| 610 | 1 | |a GST225 | |
| 610 | 1 | |a температурные зависимости | |
| 610 | 1 | |a удельное сопротивление | |
| 610 | 1 | |a энергетические диаграммы | |
| 610 | 1 | |a вольт-амперные характеристики | |
| 610 | 1 | |a изменения | |
| 610 | 1 | |a фазы | |
| 701 | 1 | |a Lazarenko |b P. I. |g Petr Ivanovich | |
| 701 | 1 | |a Kozyukhin |b S. A. |g Sergey Aleksandrovich | |
| 701 | 1 | |a Sherchenkov |b A. A. |g Aleksey Anatoljevich | |
| 701 | 1 | |a Babich |b A. V. |g Aleksey Valterovich | |
| 701 | 1 | |a Timoshenkov |b S. P. |g Sergey Petrovich | |
| 701 | 1 | |a Gromov |b D. G. |g Dmitry Gennadjevich | |
| 701 | 1 | |a Zabolotskaya |b A. V. |g Anastasiya Vladimirovna | |
| 701 | 1 | |a Kozik |b V. V. |c Chemical Engineer |c Professor-consultant of Yurga technological Institute of Tomsk Polytechnic University |f 1947- |g Vladimir Vasilievich |3 (RuTPU)RU\TPU\pers\34722 |9 18072 | |
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