Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices

Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices

Bibliographic Details
Parent link:Russian Physics Journal
Vol. 59, iss. 9.— 2017.— [P. 1417-1424]
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Юргинский технологический институт (филиал) (ЮТИ) Кафедра безопасности жизнедеятельности, экологии и физического воспитания (БЖДЭФВ)
Other Authors: Lazarenko P. I. Petr Ivanovich, Kozyukhin S. A. Sergey Aleksandrovich, Sherchenkov A. A. Aleksey Anatoljevich, Babich A. V. Aleksey Valterovich, Timoshenkov S. P. Sergey Petrovich, Gromov D. G. Dmitry Gennadjevich, Zabolotskaya A. V. Anastasiya Vladimirovna, Kozik V. V. Vladimir Vasilievich
Summary:Title screen
In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge-Sb-Te system of compositions GeSb4Te7 (GST147), GeSb2Te4 (GST124), and Ge2Sb2Te5 (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band.
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2017
Subjects:
электронный ресурс
труды учёных ТПУ
phase change memory
temperature dependences of the resistivity
current-voltage characteristics
energy diagram
GST147
GST124
GST225
температурные зависимости
удельное сопротивление
энергетические диаграммы
вольт-амперные характеристики
изменения
фазы
Online Access:https://doi.org/10.1007/s11182-017-0925-x
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=656062
Description
Summary:Title screen
In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge-Sb-Te system of compositions GeSb4Te7 (GST147), GeSb2Te4 (GST124), and Ge2Sb2Te5 (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band.
Режим доступа: по договору с организацией-держателем ресурса
DOI:10.1007/s11182-017-0925-x

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