Power switching transistors based on gallium nitride epitaxial heterostructures

Power switching transistors based on gallium nitride epitaxial heterostructures

Bibliographic Details
Parent link:Russian Microelectronics
Vol. 46, iss. 3.— 2017.— [P. 205–210]
Main Author: Erofeev E. V. Evgeny Viktorovich
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра экспериментальной физики (ЭФ)
Other Authors: Fedin I. V. Ivan Vladimirovich, Yuriev Yu. N. Yuri Nikolaevich
Summary:Title screen
The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage Vth = +1.2 V and a maximum drain-source current Ids = 0.15 A/mm at the drain-source voltage Vds = +8 V. The drain-source breakdown voltage in the closed state is Vb = 300 V at the drain-source distance Lds = 8.5 μm and drain-source voltage Vds = 0 V.
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2017
Subjects:
электронный ресурс
труды учёных ТПУ
нитрид галлия
гетероструктуры
силовые транзисторы
Online Access:http://dx.doi.org/10.1134/S1063739717020020
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=655863

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