Power switching transistors based on gallium nitride epitaxial heterostructures; Russian Microelectronics; Vol. 46, iss. 3
| Parent link: | Russian Microelectronics Vol. 46, iss. 3.— 2017.— [P. 205–210] |
|---|---|
| Hovedforfatter: | |
| Institution som forfatter: | |
| Andre forfattere: | , |
| Summary: | Title screen The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage Vth = +1.2 V and a maximum drain-source current Ids = 0.15 A/mm at the drain-source voltage Vds = +8 V. The drain-source breakdown voltage in the closed state is Vb = 300 V at the drain-source distance Lds = 8.5 μm and drain-source voltage Vds = 0 V. Режим доступа: по договору с организацией-держателем ресурса |
| Sprog: | engelsk |
| Udgivet: |
2017
|
| Fag: | |
| Online adgang: | http://dx.doi.org/10.1134/S1063739717020020 |
| Format: | MixedMaterials Electronisk Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=655863 |