Power switching transistors based on gallium nitride epitaxial heterostructures; Russian Microelectronics; Vol. 46, iss. 3
| Parent link: | Russian Microelectronics Vol. 46, iss. 3.— 2017.— [P. 205–210] |
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| Autor principal: | |
| Autor corporatiu: | |
| Altres autors: | , |
| Sumari: | Title screen The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage Vth = +1.2 V and a maximum drain-source current Ids = 0.15 A/mm at the drain-source voltage Vds = +8 V. The drain-source breakdown voltage in the closed state is Vb = 300 V at the drain-source distance Lds = 8.5 μm and drain-source voltage Vds = 0 V. Режим доступа: по договору с организацией-держателем ресурса |
| Idioma: | anglès |
| Publicat: |
2017
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| Matèries: | |
| Accés en línia: | http://dx.doi.org/10.1134/S1063739717020020 |
| Format: | Electrònic Capítol de llibre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=655863 |
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| 200 | 1 | |a Power switching transistors based on gallium nitride epitaxial heterostructures |f E. V. Erofeev, I. V. Fedin, Yu. N. Yuriev | |
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| 300 | |a Title screen | ||
| 320 | |a [References: p. 210 (8 tit.)] | ||
| 330 | |a The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage Vth = +1.2 V and a maximum drain-source current Ids = 0.15 A/mm at the drain-source voltage Vds = +8 V. The drain-source breakdown voltage in the closed state is Vb = 300 V at the drain-source distance Lds = 8.5 μm and drain-source voltage Vds = 0 V. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Russian Microelectronics | ||
| 463 | |t Vol. 46, iss. 3 |v [P. 205–210] |d 2017 | ||
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