Erofeev E. V. Evgeny Viktorovich, Fedin I. V. Ivan Vladimirovich, & Yuriev Yu. N. Yuri Nikolaevich. (2017). Power switching transistors based on gallium nitride epitaxial heterostructures; Russian Microelectronics; Vol. 46, iss. 3. 2017. https://doi.org/10.1134/S1063739717020020
Cita Chicago (17th ed.)Erofeev E. V. Evgeny Viktorovich, Fedin I. V. Ivan Vladimirovich, i Yuriev Yu. N. Yuri Nikolaevich. Power Switching Transistors Based on Gallium Nitride Epitaxial Heterostructures; Russian Microelectronics; Vol. 46, Iss. 3. 2017, 2017. https://doi.org/10.1134/S1063739717020020.
Cita MLA (9th ed.)Erofeev E. V. Evgeny Viktorovich, et al. Power Switching Transistors Based on Gallium Nitride Epitaxial Heterostructures; Russian Microelectronics; Vol. 46, Iss. 3. 2017, 2017. https://doi.org/10.1134/S1063739717020020.