APA引文

Erofeev E. V. Evgeny Viktorovich, Fedin I. V. Ivan Vladimirovich, & Yuriev Yu. N. Yuri Nikolaevich. (2017). Power switching transistors based on gallium nitride epitaxial heterostructures. 2017. https://doi.org/10.1134/S1063739717020020

Chicago Style (17th ed.) Citation

Erofeev E. V. Evgeny Viktorovich, Fedin I. V. Ivan Vladimirovich, and Yuriev Yu. N. Yuri Nikolaevich. Power Switching Transistors Based on Gallium Nitride Epitaxial Heterostructures. 2017, 2017. https://doi.org/10.1134/S1063739717020020.

MLA引文

Erofeev E. V. Evgeny Viktorovich, et al. Power Switching Transistors Based on Gallium Nitride Epitaxial Heterostructures. 2017, 2017. https://doi.org/10.1134/S1063739717020020.