A technique for obtaining thermal resistance of the dielectric-substrate contact under high-intensity irradiation; Russian Physics Journal; Vol. 44, iss. 12

Bibliographische Detailangaben
Parent link:Russian Physics Journal
Vol. 44, iss. 12.— 2001.— [P. 1289-1299]
1. Verfasser: Vaisburd D. I.
Weitere Verfasser: Pichugin V. F. Vladimir Fyodorovich, Chebodaev M. I.
Zusammenfassung:Title screen
Heating of dielectric materials is investigated under irradiation of specimens by periodically pulsed ion-beams. The solution to the equation of thermal conductivity yields constrained variations of the specimen's temperature around its average value, with the repetition rate being that of the radiation-pulse frequency. Initially, the average variation-period temperature is found to grow, while after saturation it approaches a quasi-stationary value controlled entirely by the thermal resistance of the specimen-substrate contact under the same irradiation conditions. A method for the time-averaged dielectric temperature under saturation is proposed. Using this method, an express-technique for calculating thermal resistance of the dielectric-substrate contact is offered. It is based on periodically pulsed heating of the dielectric specimen by a moderate-density ion beam and precision measurements of the its average temperature. The error of the express technique is evaluated and so is its applicability range. A hypothesis is put forward that proceeding form this new method for thermal resistance one may determine the energy lost in ion sputtering.
Режим доступа: по договору с организацией-держателем ресурса
Sprache:Englisch
Veröffentlicht: 2001
Schlagworte:
Online-Zugang:http://dx.doi.org/10.1023/A:1015792013118
Format: Elektronisch Buchkapitel
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=655623

MARC

LEADER 00000naa0a2200000 4500
001 655623
005 20250321163454.0
035 |a (RuTPU)RU\TPU\network\21882 
035 |a RU\TPU\network\300 
090 |a 655623 
100 |a 20170919d2001 k||y0rusy50 ba 
101 0 |a eng 
102 |a US 
135 |a drnn ---uucaa 
181 0 |a i  
182 0 |a b 
200 1 |a A technique for obtaining thermal resistance of the dielectric-substrate contact under high-intensity irradiation  |f D. I. Vaisburd, V. F. Pichugin, M. I. Chebodaev 
203 |a Text  |c electronic 
300 |a Title screen 
320 |a [Ref.: p. 1299 (17 tit.)] 
330 |a Heating of dielectric materials is investigated under irradiation of specimens by periodically pulsed ion-beams. The solution to the equation of thermal conductivity yields constrained variations of the specimen's temperature around its average value, with the repetition rate being that of the radiation-pulse frequency. Initially, the average variation-period temperature is found to grow, while after saturation it approaches a quasi-stationary value controlled entirely by the thermal resistance of the specimen-substrate contact under the same irradiation conditions. A method for the time-averaged dielectric temperature under saturation is proposed. Using this method, an express-technique for calculating thermal resistance of the dielectric-substrate contact is offered. It is based on periodically pulsed heating of the dielectric specimen by a moderate-density ion beam and precision measurements of the its average temperature. The error of the express technique is evaluated and so is its applicability range. A hypothesis is put forward that proceeding form this new method for thermal resistance one may determine the energy lost in ion sputtering. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
461 |t Russian Physics Journal 
463 |t Vol. 44, iss. 12  |v [P. 1289-1299]  |d 2001 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a ионные пучки 
610 1 |a теплопроводность 
610 1 |a экспресс-методы 
610 1 |a термическое сопротивление 
700 1 |a Vaisburd  |b D. I. 
701 1 |a Pichugin  |b V. F.  |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences  |c Physicist  |f 1944-  |g Vladimir Fyodorovich  |3 (RuTPU)RU\TPU\pers\30933 
701 1 |a Chebodaev  |b M. I. 
801 2 |a RU  |b 63413507  |c 20170919  |g RCR 
856 4 |u http://dx.doi.org/10.1023/A:1015792013118 
942 |c CF