Flexible hard Al-Si-N films for high temperature operation; Surface and Coatings Technology; Vol. 307, pt. B: Electrochemical and Plasma Electrolytic Modification of Metal Surfaces

Flexible hard Al-Si-N films for high temperature operation; Surface and Coatings Technology; Vol. 307, pt. B: Electrochemical and Plasma Electrolytic Modification of Metal Surfaces

Bibliographic Details
Parent link:Surface and Coatings Technology
Vol. 307, pt. B: Electrochemical and Plasma Electrolytic Modification of Metal Surfaces.— 2016.— [P. 1274-1283]
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Лаборатория № 1
Other Authors: Musil Y. Yindrikh, Remnev (Remnyov) G. E. Gennady Efimovich, Legostaev V. N. Viktor Nikiforovich, Uglov V. V. Vladimir Vasilievich, Lebedinsky A. M. Aleksey Mikhaylovich, Lauk A. L. Aleksandr Lukyanovich, Prochazka J ., Haviar S., Smolyanskiy (Smolyansky, Smolyanskii) E. A. Egor Aleksandrovich
Summary:Title screen
This article reports on flexible hard Al-Si-N films prepared by reactive magnetron sputtering. The structure andmechanical properties of Al-Si-N films were controlled by the content of Si in the film, partial pressure of nitrogenpN2 used in sputtering and the power delivered to the magnetron. The Al-Si-N films with a low (?10 at.%) Si contentand with a high (?20 at.%) Si content were prepared. Correlations between the structure, microstructure,mechanical properties and their thermal stability of the Al-Si-N films are analyzed in detail. Thermal stabilityof Al-Si-N films was assessed by thermal annealing in air and water vapor up to annealing temperature Ta =1200 °C. It is shown that (1) the increase of Si content in the Al-Si-N film leads to the change of its crystallinestructure from polycrystalline to X-ray amorphous and (2) the flexible hard Al-Si-N films with high (i) hardnessH ? 20 GPa, (ii) ratio H/E? ? 0.1, and (iii) elastic recovery We ? 60% exhibit enhanced resistance to cracking and(3) the thermal stability of Al-Si-N films with a high (?20 at.%) Si content achieves up to Ta ? 1200 °C in air andup to Ta ? 800 °C in water vapor; here the effective Young's modulus E? = E / (1 ? ?2), E is the Young's modulusand ? is the Poisson's ratio. Conditions under which the flexible hard Al-Si-N films with enhanced resistance tocracking and high thermal stability can be prepared are described in detail.
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2016
Subjects:
электронный ресурс
труды учёных ТПУ
mechanical properties
structures
magnetron sputtering
механические свойства
термическая стабильность
высокие температуры
Online Access:http://dx.doi.org/10.1016/j.surfcoat.2016.05.054
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=655564

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