Flexible hard Al-Si-N films for high temperature operation; Surface and Coatings Technology; Vol. 307, pt. B: Electrochemical and Plasma Electrolytic Modification of Metal Surfaces
| Parent link: | Surface and Coatings Technology Vol. 307, pt. B: Electrochemical and Plasma Electrolytic Modification of Metal Surfaces.— 2016.— [P. 1274-1283] |
|---|---|
| Körperschaft: | |
| Weitere Verfasser: | , , , , , , , , |
| Zusammenfassung: | Title screen This article reports on flexible hard Al-Si-N films prepared by reactive magnetron sputtering. The structure andmechanical properties of Al-Si-N films were controlled by the content of Si in the film, partial pressure of nitrogenpN2 used in sputtering and the power delivered to the magnetron. The Al-Si-N films with a low (?10 at.%) Si contentand with a high (?20 at.%) Si content were prepared. Correlations between the structure, microstructure,mechanical properties and their thermal stability of the Al-Si-N films are analyzed in detail. Thermal stabilityof Al-Si-N films was assessed by thermal annealing in air and water vapor up to annealing temperature Ta =1200 °C. It is shown that (1) the increase of Si content in the Al-Si-N film leads to the change of its crystallinestructure from polycrystalline to X-ray amorphous and (2) the flexible hard Al-Si-N films with high (i) hardnessH ? 20 GPa, (ii) ratio H/E? ? 0.1, and (iii) elastic recovery We ? 60% exhibit enhanced resistance to cracking and(3) the thermal stability of Al-Si-N films with a high (?20 at.%) Si content achieves up to Ta ? 1200 °C in air andup to Ta ? 800 °C in water vapor; here the effective Young's modulus E? = E / (1 ? ?2), E is the Young's modulusand ? is the Poisson's ratio. Conditions under which the flexible hard Al-Si-N films with enhanced resistance tocracking and high thermal stability can be prepared are described in detail. Режим доступа: по договору с организацией-держателем ресурса |
| Sprache: | Englisch |
| Veröffentlicht: |
2016
|
| Schlagworte: | |
| Online-Zugang: | http://dx.doi.org/10.1016/j.surfcoat.2016.05.054 |
| Format: | Elektronisch Buchkapitel |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=655564 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 655564 | ||
| 005 | 20250913133456.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\21766 | ||
| 035 | |a RU\TPU\network\17786 | ||
| 090 | |a 655564 | ||
| 100 | |a 20170912d2016 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Flexible hard Al-Si-N films for high temperature operation |f Y. Musil, G. E. Remnev, V. N. Legostaev [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 1118 (53 tit.)] | ||
| 330 | |a This article reports on flexible hard Al-Si-N films prepared by reactive magnetron sputtering. The structure andmechanical properties of Al-Si-N films were controlled by the content of Si in the film, partial pressure of nitrogenpN2 used in sputtering and the power delivered to the magnetron. The Al-Si-N films with a low (?10 at.%) Si contentand with a high (?20 at.%) Si content were prepared. Correlations between the structure, microstructure,mechanical properties and their thermal stability of the Al-Si-N films are analyzed in detail. Thermal stabilityof Al-Si-N films was assessed by thermal annealing in air and water vapor up to annealing temperature Ta =1200 °C. It is shown that (1) the increase of Si content in the Al-Si-N film leads to the change of its crystallinestructure from polycrystalline to X-ray amorphous and (2) the flexible hard Al-Si-N films with high (i) hardnessH ? 20 GPa, (ii) ratio H/E? ? 0.1, and (iii) elastic recovery We ? 60% exhibit enhanced resistance to cracking and(3) the thermal stability of Al-Si-N films with a high (?20 at.%) Si content achieves up to Ta ? 1200 °C in air andup to Ta ? 800 °C in water vapor; here the effective Young's modulus E? = E / (1 ? ?2), E is the Young's modulusand ? is the Poisson's ratio. Conditions under which the flexible hard Al-Si-N films with enhanced resistance tocracking and high thermal stability can be prepared are described in detail. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 1 | |t Surface and Coatings Technology | |
| 463 | 1 | |t Vol. 307, pt. B: Electrochemical and Plasma Electrolytic Modification of Metal Surfaces |o 5th International Conference |v [P. 1274-1283] |d 2016 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a mechanical properties | |
| 610 | 1 | |a structures | |
| 610 | 1 | |a magnetron sputtering | |
| 610 | 1 | |a механические свойства | |
| 610 | 1 | |a термическая стабильность | |
| 610 | 1 | |a высокие температуры | |
| 701 | 1 | |a Musil |b Y. |c physicist |c Leading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1934- |g Yindrikh |3 (RuTPU)RU\TPU\pers\36957 | |
| 701 | 1 | |a Remnev (Remnyov) |b G. E. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1948- |g Gennady Efimovich |3 (RuTPU)RU\TPU\pers\31500 |9 15661 | |
| 701 | 1 | |a Legostaev |b V. N. |g Viktor Nikiforovich | |
| 701 | 1 | |a Uglov |b V. V. |c Physicist |c Leading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1954- |g Vladimir Vasilievich |3 (RuTPU)RU\TPU\pers\36737 | |
| 701 | 1 | |a Lebedinsky |b A. M. |c electrophysicist |c Associate Scientist of Tomsk Polytechnic University, candidate of physico-mathematical Sciences |f 1982- |g Aleksey Mikhaylovich |3 (RuTPU)RU\TPU\pers\36499 | |
| 701 | 1 | |a Lauk |b A. L. |c Physicist |c Leading engineer of Tomsk Polytechnic University |f 1957- |g Aleksandr Lukyanovich |3 (RuTPU)RU\TPU\pers\37675 | |
| 701 | 1 | |a Prochazka |b J . | |
| 701 | 1 | |a Haviar |b S. | |
| 701 | 1 | |a Smolyanskiy (Smolyansky, Smolyanskii) |b E. A. |c Physicist |c Research Engineer of Tomsk Polytechnic University |f 1985- |g Egor Aleksandrovich |3 (RuTPU)RU\TPU\pers\37673 |9 20478 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Институт физики высоких технологий (ИФВТ) |b Лаборатория № 1 |3 (RuTPU)RU\TPU\col\19035 |
| 801 | 2 | |a RU |b 63413507 |c 20200717 |g RCR | |
| 850 | |a 63413507 | ||
| 856 | 4 | |u http://dx.doi.org/10.1016/j.surfcoat.2016.05.054 | |
| 942 | |c CF | ||