Effect of temperature on resistance of LEDs based on AlGaAs heterostructures to {60}Co gamma radiation

Effect of temperature on resistance of LEDs based on AlGaAs heterostructures to {60}Co gamma radiation

Bibliographic Details
Parent link:Journal of Physics: Conference Series
Vol. 830 : Energy Fluxes and Radiation Effects 2016.— 2017.— [012134, 5 p.]
Main Author: Gradoboev A. V. Aleksandr Vasilyevich
Corporate Authors: Национальный исследовательский Томский политехнический университет (ТПУ) Юргинский технологический институт (филиал) (ЮТИ) Кафедра сварочного производства (КСП), Национальный исследовательский Томский политехнический университет (ТПУ) Институт неразрушающего контроля (ИНК) Лаборатория № 51 (Радиационных испытаний материалов и изделий)
Other Authors: Rubanov P. V. Pavel Vladimirovich, Sednev V. V. Vyacheslav Vladimirovich
Summary:Title screen
The paper presents the results obtained in the study of the change in the parameters of IR LEDs based on AlGaAs double heterostructures under {60}Co gamma irradiation with regard to irradiation temperature. The study indicated several consecutive stages of LED emissive power lowering under ionizing radiation. Increased temperature during gamma irradiation enhances radiation resistance at the first stage due to radiation-stimulated defect annealing, which reduces relative contribution of the first stage to the overall emissive power lowering. It was found that in exposure at temperature more than 380 K, the first stage of LED emissive power lowering is completely eliminated. At the second stage, increase in resistance is caused by the decreased relative contribution of the less stable first stage to the overall emissive power lowering. The maximum resistance of LEDs to gamma radiation depends on radiation resistance of metal–semiconductor contacts.
Language:English
Published: 2017
Series:Radiation physics and chemistry of condensed matter
Subjects:
электронный ресурс
труды учёных ТПУ
температура
сопротивление
светодиоды
гетероструктуры
гамма-облучение
ионизирующие излучения
радиационная стойкость
металл-полупроводник
Online Access:http://dx.doi.org/10.1088/1742-6596/830/1/012134
http://earchive.tpu.ru/handle/11683/39507
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=654952

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