Local mechanical stress relaxation of Gunn diodes irradiated by protons; Journal of Physics: Conference Series; Vol. 830 : Energy Fluxes and Radiation Effects 2016

Local mechanical stress relaxation of Gunn diodes irradiated by protons; Journal of Physics: Conference Series; Vol. 830 : Energy Fluxes and Radiation Effects 2016

Detalhes bibliográficos
Parent link:Journal of Physics: Conference Series
Vol. 830 : Energy Fluxes and Radiation Effects 2016.— 2017.— [012133, 9 p.]
Autor principal: Gradoboev A. V. Aleksandr Vasilyevich
Autor Corporativo: Национальный исследовательский Томский политехнический университет (ТПУ) Юргинский технологический институт (филиал) (ЮТИ) Кафедра сварочного производства (КСП)
Outros Autores: Tesleva E. P. Elena Pavlovna
Resumo:Title screen
The aim of the work is studying the impact of Gunn diodes thermocompression bonding conditions upon their resistance to being radiated with protons of various energies. It was established that the tough conditions of Gunn diodes thermocompression bonding results in local mechanic stresses introduced into the active layer of the device, reduction of electron mobility because of the faults introduction and, subsequently, to reduction of operating current, power of UHF generation, percentage of qualitative units production and general reduction of production efficiency of the devices with required characteristics. Irradiation of Gunn diodes produced under the tough conditions of thermocompression bonding with protons which energy is (40–60) MeV with an absorbed dose of (1–6)•10{2} Gy does not practically reduce the radiation resistance of Gunn diodes produced with application of the given technique. This technique can be recommended for all semiconductor devices on the base of GaAs, which parameters depend significantly upon the mobility of the electrons, to increase the efficiency of production.
Idioma:inglês
Publicado em: 2017
Colecção:Radiation physics and chemistry of condensed matter
Assuntos:
электронный ресурс
труды учёных ТПУ
механические напряжения
диоды Ганна
облучение
протоны
склеивание
радиационная стойкость
полупроводниковые приборы
подвижность
электроны
Acesso em linha:http://dx.doi.org/10.1088/1742-6596/830/1/012133
http://earchive.tpu.ru/handle/11683/39506
Formato: Recurso Electrónico Capítulo de Livro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=654951

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