Local mechanical stress relaxation of Gunn diodes irradiated by protons; Journal of Physics: Conference Series; Vol. 830 : Energy Fluxes and Radiation Effects 2016
| Parent link: | Journal of Physics: Conference Series Vol. 830 : Energy Fluxes and Radiation Effects 2016.— 2017.— [012133, 9 p.] |
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| Summary: | Title screen The aim of the work is studying the impact of Gunn diodes thermocompression bonding conditions upon their resistance to being radiated with protons of various energies. It was established that the tough conditions of Gunn diodes thermocompression bonding results in local mechanic stresses introduced into the active layer of the device, reduction of electron mobility because of the faults introduction and, subsequently, to reduction of operating current, power of UHF generation, percentage of qualitative units production and general reduction of production efficiency of the devices with required characteristics. Irradiation of Gunn diodes produced under the tough conditions of thermocompression bonding with protons which energy is (40–60) MeV with an absorbed dose of (1–6)•10{2} Gy does not practically reduce the radiation resistance of Gunn diodes produced with application of the given technique. This technique can be recommended for all semiconductor devices on the base of GaAs, which parameters depend significantly upon the mobility of the electrons, to increase the efficiency of production. |
| Sprog: | engelsk |
| Udgivet: |
2017
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| Serier: | Radiation physics and chemistry of condensed matter |
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| Online adgang: | http://dx.doi.org/10.1088/1742-6596/830/1/012133 http://earchive.tpu.ru/handle/11683/39506 |
| Format: | xMaterials Electronisk Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=654951 |
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| 200 | 1 | |a Local mechanical stress relaxation of Gunn diodes irradiated by protons |f A. V. Gradoboev, E. P. Tesleva | |
| 203 | |a Text |c electronic | ||
| 225 | 1 | |a Radiation physics and chemistry of condensed matter | |
| 300 | |a Title screen | ||
| 320 | |a [References: 12 tit.] | ||
| 330 | |a The aim of the work is studying the impact of Gunn diodes thermocompression bonding conditions upon their resistance to being radiated with protons of various energies. It was established that the tough conditions of Gunn diodes thermocompression bonding results in local mechanic stresses introduced into the active layer of the device, reduction of electron mobility because of the faults introduction and, subsequently, to reduction of operating current, power of UHF generation, percentage of qualitative units production and general reduction of production efficiency of the devices with required characteristics. Irradiation of Gunn diodes produced under the tough conditions of thermocompression bonding with protons which energy is (40–60) MeV with an absorbed dose of (1–6)•10{2} Gy does not practically reduce the radiation resistance of Gunn diodes produced with application of the given technique. This technique can be recommended for all semiconductor devices on the base of GaAs, which parameters depend significantly upon the mobility of the electrons, to increase the efficiency of production. | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\3526 |t Journal of Physics: Conference Series | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\20593 |t Vol. 830 : Energy Fluxes and Radiation Effects 2016 |o 5th International Congress, 2–7 October 2016, Tomsk, Russian Federation |o [materials] |f National Research Tomsk Polytechnic University (TPU) ; eds. M. V. Trigub G. E. Osokin ; A. S. Konovod |v [012133, 9 p.] |d 2017 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a механические напряжения | |
| 610 | 1 | |a диоды Ганна | |
| 610 | 1 | |a облучение | |
| 610 | 1 | |a протоны | |
| 610 | 1 | |a склеивание | |
| 610 | 1 | |a радиационная стойкость | |
| 610 | 1 | |a полупроводниковые приборы | |
| 610 | 1 | |a подвижность | |
| 610 | 1 | |a электроны | |
| 700 | 1 | |a Gradoboev |b A. V. |c physicist |c Professor of Yurga technological Institute of Tomsk Polytechnic University, Doctor of technical sciences |f 1952- |g Aleksandr Vasilyevich |2 stltpush |3 (RuTPU)RU\TPU\pers\34242 |9 17773 | |
| 701 | 1 | |a Tesleva |b E. P. |c physicist |c Associate Professor of Yurga technological Institute of Tomsk Polytechnic University, Candidate of physical and mathematical Sciences |f 1976- |g Elena Pavlovna |2 stltpush |3 (RuTPU)RU\TPU\pers\33093 |9 16925 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Юргинский технологический институт (филиал) (ЮТИ) |b Кафедра сварочного производства (КСП) |h 355 |2 stltpush |3 (RuTPU)RU\TPU\col\18891 |
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