The dynamic sublayers for improving the adhesion of CVD diamond films on copper
| Parent link: | Journal of Physics: Conference Series Vol. 830 : Energy Fluxes and Radiation Effects 2016.— 2017.— [012102, 5 p.] |
|---|---|
| Autor Principal: | |
| Autor Corporativo: | |
| Outros autores: | , |
| Summary: | Title screen Polycrystalline diamond films were fabricated on copper substrates by a multi-step process comprised of physical vapor deposition of Al-based composite interlayer on Cu substrate and depositing continuous diamond film on composite interlayer by plasma assisted chemical vapor deposition (PACVD). The interface characteristics and adhesion strength were investigated by Auger electron spectroscopy, Raman analysis, calotest and indentation test. The results show that the continuous film without cracks is successfully obtained. The improved adhesion between diamond film and substrate results from the low residual stress in the film due to their compensation by Al interlayer in the sample cooling process. |
| Idioma: | inglés |
| Publicado: |
2017
|
| Series: | Modification of materials with particle beams and plasma flows |
| Subjects: | |
| Acceso en liña: | http://dx.doi.org/10.1088/1742-6596/830/1/012102 http://earchive.tpu.ru/handle/11683/39488 |
| Formato: | Electrónico Capítulo de libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=654920 |
| Summary: | Title screen Polycrystalline diamond films were fabricated on copper substrates by a multi-step process comprised of physical vapor deposition of Al-based composite interlayer on Cu substrate and depositing continuous diamond film on composite interlayer by plasma assisted chemical vapor deposition (PACVD). The interface characteristics and adhesion strength were investigated by Auger electron spectroscopy, Raman analysis, calotest and indentation test. The results show that the continuous film without cracks is successfully obtained. The improved adhesion between diamond film and substrate results from the low residual stress in the film due to their compensation by Al interlayer in the sample cooling process. |
|---|---|
| DOI: | 10.1088/1742-6596/830/1/012102 |