The dynamic sublayers for improving the adhesion of CVD diamond films on copper; Journal of Physics: Conference Series; Vol. 830 : Energy Fluxes and Radiation Effects 2016
| Parent link: | Journal of Physics: Conference Series Vol. 830 : Energy Fluxes and Radiation Effects 2016.— 2017.— [012102, 5 p.] |
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| Автор: | |
| Співавтор: | |
| Інші автори: | , |
| Резюме: | Title screen Polycrystalline diamond films were fabricated on copper substrates by a multi-step process comprised of physical vapor deposition of Al-based composite interlayer on Cu substrate and depositing continuous diamond film on composite interlayer by plasma assisted chemical vapor deposition (PACVD). The interface characteristics and adhesion strength were investigated by Auger electron spectroscopy, Raman analysis, calotest and indentation test. The results show that the continuous film without cracks is successfully obtained. The improved adhesion between diamond film and substrate results from the low residual stress in the film due to their compensation by Al interlayer in the sample cooling process. |
| Мова: | Англійська |
| Опубліковано: |
2017
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| Серія: | Modification of materials with particle beams and plasma flows |
| Предмети: | |
| Онлайн доступ: | http://dx.doi.org/10.1088/1742-6596/830/1/012102 http://earchive.tpu.ru/handle/11683/39488 |
| Формат: | Електронний ресурс Частина з книги |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=654920 |
| Резюме: | Title screen Polycrystalline diamond films were fabricated on copper substrates by a multi-step process comprised of physical vapor deposition of Al-based composite interlayer on Cu substrate and depositing continuous diamond film on composite interlayer by plasma assisted chemical vapor deposition (PACVD). The interface characteristics and adhesion strength were investigated by Auger electron spectroscopy, Raman analysis, calotest and indentation test. The results show that the continuous film without cracks is successfully obtained. The improved adhesion between diamond film and substrate results from the low residual stress in the film due to their compensation by Al interlayer in the sample cooling process. |
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| DOI: | 10.1088/1742-6596/830/1/012102 |