Effect of emission on subnanosecond breakdown in a gas diode at low pressure

Chi tiết về thư mục
Parent link:Journal of Physics: Conference Series
Vol. 830 : Energy Fluxes and Radiation Effects 2016.— 2017.— [012014, 6 p.]
Tác giả của công ty: Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра высоковольтной электрофизики и сильноточной электроники (ВЭСЭ)
Tác giả khác: Baksht E. Kh., Belomyttsev S. Ya., Burachenko A. G., Grishkov A. A., Shklyaev V. A. Valeriy Aleksandrovich
Tóm tắt:Title screen
The paper presents experimental and numerical research results on the operation of gas diode at low pressure. A high dispersion in the runaway electron beam current (from 20 to 100 A) with respect to the average one (~50 A) is observed for a tubular cathode with a working edge radius of 30 [mu]m, nitrogen pressure of 30 Torr, and an interelectrode gap of 6 mm. Numerical simulation data show that the low beam current (~20 A) is due to the early electron emission from the cathode (at the stage of low-voltage prepulse), in which the runaway electron beam is formed from the boundary of plasma layer developing early in the breakdown. The high beam current (~100 A) is due to the delayed electron emission from the cathode, which increases the diode voltage and the runaway electron beam current. In the latter case, the runaway electron beam is formed directly at the cathode.
Ngôn ngữ:Tiếng Anh
Được phát hành: 2017
Loạt:High-current electronics
Những chủ đề:
Truy cập trực tuyến:http://dx.doi.org/10.1088/1742-6596/830/1/012014
http://earchive.tpu.ru/handle/11683/39515
Định dạng: Điện tử Chương của sách
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=654889

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