Spark plasma sintering of ceramics based on silicon nitride and titanium nitride; 11th International Forum on Strategic Technology (IFOST 2016); Pt. 1

Dades bibliogràfiques
Parent link:11th International Forum on Strategic Technology (IFOST 2016): 1-3 June 2016, Novosibirsk, Russiain/ Novosibirsk State Technical University.— , 2016
Pt. 1.— 2016.— [P. 173-177]
Autor corporatiu: Национальный исследовательский Томский политехнический университет (ТПУ) Энергетический институт (ЭНИН) Кафедра электроснабжения промышленных предприятий (ЭПП)
Altres autors: Sivkov A. A. Aleksandr Anatolyevich, Gerasimov D. Yu. Dmitry Yurievich, Evdokimov A. A. Andrey Anatolievich, Rakhmatullin I. A. Ilyas Aminovich, Nikitin D. S. Dmitry Sergeevich
Sumari:Title screen
The dependences of the microstructure and physical and mechanical properties of ceramic mixtures Si[3]N[4]/TiN in the full range of mass ratios of the components were studied. The process of sintering and physical and chemical processes were investigated. In particular, the hardness and density of the material were obtained depending on the ratio of conductive titanium nitride and insulating silicon nitride in the range above and below the value of the percolation threshold.
Режим доступа: по договору с организацией-держателем ресурса
Idioma:anglès
Publicat: 2016
Col·lecció:New materials and nanotechnologies
Matèries:
Accés en línia:http://dx.doi.org/10.1109/IFOST.2016.7884076
Format: Electrònic Capítol de llibre
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=654557

MARC

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330 |a The dependences of the microstructure and physical and mechanical properties of ceramic mixtures Si[3]N[4]/TiN in the full range of mass ratios of the components were studied. The process of sintering and physical and chemical processes were investigated. In particular, the hardness and density of the material were obtained depending on the ratio of conductive titanium nitride and insulating silicon nitride in the range above and below the value of the percolation threshold. 
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