Study on the influence of the magnetron power supply on the properties of the Silicon Nitride films

Study on the influence of the magnetron power supply on the properties of the Silicon Nitride films

Bibliographic Details
Parent link:Journal of Physics: Conference Series
Vol. 789 : Low temperature Plasma in the Processes of Functional Coating Preparation.— 2017.— [012028, 6 p.]
Corporate Authors: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра экспериментальной физики (ЭФ), Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра общей физики (ОФ)
Other Authors: Kiseleva D. V. Darjya Vasiljevna, Yuriev Yu. N. Yuri Nikolaevich, Petrakov Yu. V. Yury Vyacheslavovich, Sidelev D. V. Dmitry Vladimirovich, Korzhenko D. V. Dmitry Vladimirovich, Erofeev E. V. Evgeny Viktorovich
Summary:Title screen
Silicon nitride (Si3N4) films were deposited by magnetron sputtering of silicon target in (Ar+N2) atmosphere with refractive index 1.95 - 2.05. The results of Fourier transform infrared (FTIR) spectrophotometry showed Si-N bonds in the thin films with concentration 2.4110[23]- 3.4810[23]cm[-3]. Dependences of deposition rate, optical characteristics and surface morphology on rate of N2 flow and properties of magnetron power supply.
Language:English
Published: 2017
Subjects:
электронный ресурс
труды учёных ТПУ
нитрид кремния
магнетроны
магнетронное распыление
фурье-спектрорадиометрия
Online Access:http://dx.doi.org/10.1088/1742-6596/789/1/012028
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=654307

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