Study on the influence of the magnetron power supply on the properties of the Silicon Nitride films; Journal of Physics: Conference Series; Vol. 789 : Low temperature Plasma in the Processes of Functional Coating Preparation

গ্রন্থ-পঞ্জীর বিবরন
Parent link:Journal of Physics: Conference Series
Vol. 789 : Low temperature Plasma in the Processes of Functional Coating Preparation.— 2017.— [012028, 6 p.]
সংস্থা লেখক: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра экспериментальной физики (ЭФ), Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра общей физики (ОФ)
অন্যান্য লেখক: Kiseleva D. V. Darjya Vasiljevna, Yuriev Yu. N. Yuri Nikolaevich, Petrakov Yu. V. Yury Vyacheslavovich, Sidelev D. V. Dmitry Vladimirovich, Korzhenko D. V. Dmitry Vladimirovich, Erofeev E. V. Evgeny Viktorovich
সংক্ষিপ্ত:Title screen
Silicon nitride (Si3N4) films were deposited by magnetron sputtering of silicon target in (Ar+N2) atmosphere with refractive index 1.95 - 2.05. The results of Fourier transform infrared (FTIR) spectrophotometry showed Si-N bonds in the thin films with concentration 2.4110[23]- 3.4810[23]cm[-3]. Dependences of deposition rate, optical characteristics and surface morphology on rate of N2 flow and properties of magnetron power supply.
ভাষা:ইংরেজি
প্রকাশিত: 2017
বিষয়গুলি:
অনলাইন ব্যবহার করুন:http://dx.doi.org/10.1088/1742-6596/789/1/012028
বিন্যাস: MixedMaterials বৈদ্যুতিক গ্রন্থের অধ্যায়
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=654307