Study on the influence of the magnetron power supply on the properties of the Silicon Nitride films
| Parent link: | Journal of Physics: Conference Series Vol. 789 : Low temperature Plasma in the Processes of Functional Coating Preparation.— 2017.— [012028, 6 p.] |
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| Enti autori: | , |
| Altri autori: | , , , , , |
| Riassunto: | Title screen Silicon nitride (Si3N4) films were deposited by magnetron sputtering of silicon target in (Ar+N2) atmosphere with refractive index 1.95 - 2.05. The results of Fourier transform infrared (FTIR) spectrophotometry showed Si-N bonds in the thin films with concentration 2.4110[23]- 3.4810[23]cm[-3]. Dependences of deposition rate, optical characteristics and surface morphology on rate of N2 flow and properties of magnetron power supply. |
| Lingua: | inglese |
| Pubblicazione: |
2017
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| Soggetti: | |
| Accesso online: | http://dx.doi.org/10.1088/1742-6596/789/1/012028 |
| Natura: | Elettronico Capitolo di libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=654307 |
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| 200 | 1 | |a Study on the influence of the magnetron power supply on the properties of the Silicon Nitride films |f D. V. Kiseleva [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 10 tit.] | ||
| 330 | |a Silicon nitride (Si3N4) films were deposited by magnetron sputtering of silicon target in (Ar+N2) atmosphere with refractive index 1.95 - 2.05. The results of Fourier transform infrared (FTIR) spectrophotometry showed Si-N bonds in the thin films with concentration 2.4110[23]- 3.4810[23]cm[-3]. Dependences of deposition rate, optical characteristics and surface morphology on rate of N2 flow and properties of magnetron power supply. | ||
| 461 | 1 | |t Journal of Physics: Conference Series | |
| 463 | 1 | |t Vol. 789 : Low temperature Plasma in the Processes of Functional Coating Preparation |o VIII All-Russian (with international participation) Conference, 6-9 November 2016, Kazan, Russia |o [proceedings] |f Kazan Federal University |v [012028, 6 p.] |d 2017 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a нитрид кремния | |
| 610 | 1 | |a магнетроны | |
| 610 | 1 | |a магнетронное распыление | |
| 610 | 1 | |a фурье-спектрорадиометрия | |
| 701 | 1 | |a Kiseleva |b D. V. |g Darjya Vasiljevna | |
| 701 | 1 | |a Yuriev |b Yu. N. |c specialist in the field of hydrogen energy |c Head of the laboratory of Tomsk Polytechnic University, Associate Scientist |f 1984- |g Yuri Nikolaevich |3 (RuTPU)RU\TPU\pers\31508 |9 15669 | |
| 701 | 1 | |a Petrakov |b Yu. V. |g Yury Vyacheslavovich | |
| 701 | 1 | |a Sidelev |b D. V. |c physicist |c engineer of Tomsk Polytechnic University |f 1991- |g Dmitry Vladimirovich |3 (RuTPU)RU\TPU\pers\34524 |9 17905 | |
| 701 | 1 | |a Korzhenko |b D. V. |c physicist |c engineer of Tomsk Polytechnic University |f 1988- |g Dmitry Vladimirovich |3 (RuTPU)RU\TPU\pers\37367 |9 20285 | |
| 701 | 1 | |a Erofeev |b E. V. |g Evgeny Viktorovich | |
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| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Физико-технический институт (ФТИ) |b Кафедра общей физики (ОФ) |3 (RuTPU)RU\TPU\col\18734 |
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