Gating system design for the space device case using T-Flex CAD; MATEC Web of Conferences; Vol. 102 : Space Engineering
| Parent link: | MATEC Web of Conferences Vol. 102 : Space Engineering.— 2017.— [01005, 5 p.] |
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| מחבר ראשי: | |
| מחבר תאגידי: | |
| מחברים אחרים: | |
| סיכום: | Title screen The judicious selection of gating system for the consumable pattern takes a lot of time, labour and other significant resources. The modern design technologies provide quick and effective ways for gating system calculation and casting process simulation. Gating system modeling allows estimating different kinds of defects which can occur at the developing stage of casting process. Moreover, it is possible to modify the whole gating system configuration if some parameters are changed. Analyzing these data and modifying the gating system characteristics high quality of castings can be achieved. |
| שפה: | אנגלית |
| יצא לאור: |
2017
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| נושאים: | |
| גישה מקוונת: | http://dx.doi.org/10.1051/matecconf/201710201005 http://earchive.tpu.ru/handle/11683/37981 |
| פורמט: | אלקטרוני Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=654168 |
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| 200 | 1 | |a Gating system design for the space device case using T-Flex CAD |f Munkhe-Zul Ayusheev, T. G. Kostyuchenko | |
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| 320 | |a [References: 9 tit.] | ||
| 330 | |a The judicious selection of gating system for the consumable pattern takes a lot of time, labour and other significant resources. The modern design technologies provide quick and effective ways for gating system calculation and casting process simulation. Gating system modeling allows estimating different kinds of defects which can occur at the developing stage of casting process. Moreover, it is possible to modify the whole gating system configuration if some parameters are changed. Analyzing these data and modifying the gating system characteristics high quality of castings can be achieved. | ||
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| 463 | 0 | |0 (RuTPU)RU\TPU\network\19686 |t Vol. 102 : Space Engineering |o V International Forum for Young Scientists, April 18-20, 2017, Tomsk, Russia |o [proceedings] |f National Research Tomsk Polytechnic University (TPU) ; eds. V. N. Borikov [et al.] |v [01005, 5 p.] |d 2017 | |
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