Diffusion mass transfer in ionic materials under intense electron irradiation; IOP Conference Series: Materials Science and Engineering; Vol. 168 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2016)
| Parent link: | IOP Conference Series: Materials Science and Engineering Vol. 168 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2016).— 2017.— [012104, 5 p.] |
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| Andere auteurs: | , , , , |
| Samenvatting: | Title screen The results of studies on the impact of an electron beam with the energy of 1-2 MeV on diffusion processes in materials with ionic bonds are presented in the paper. Used electron beam intensity is allowed to provide heating of the material to temperatures of 1600 K. Diffusion of Na, Mg, Al ions into single crystals KBr in the temperature range 573-883 K, Al ions in the NiO-AlO system at 1373-1573 K, was studied. Diffusion annealing carried out under thermal and radiation-thermal heating of the samples. Then diffusion coefficients were determined. It was found stimulating action of irradiation on diffusion processes of Mg, Al ions in Kbr and Al ions in the NiO-Al[2]O[3] system, which consists in increasing the diffusion coefficients at radiation-thermal annealing. The observed effect is achieved by increasing the effective rate of diffusion jumps. |
| Taal: | Engels |
| Gepubliceerd in: |
2017
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| Reeks: | Adjacent to the main theme of the conference issues |
| Onderwerpen: | |
| Online toegang: | http://dx.doi.org/10.1088/1757-899X/168/1/012104 http://earchive.tpu.ru/handle/11683/37781 |
| Formaat: | Elektronisch Hoofdstuk |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=653887 |
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| 200 | 1 | |a Diffusion mass transfer in ionic materials under intense electron irradiation |f I. G. Bochkarev [et al.] | |
| 203 | |a Text |c electronic | ||
| 225 | 1 | |a Adjacent to the main theme of the conference issues | |
| 300 | |a Title screen | ||
| 320 | |a [References: 18 tit.] | ||
| 330 | |a The results of studies on the impact of an electron beam with the energy of 1-2 MeV on diffusion processes in materials with ionic bonds are presented in the paper. Used electron beam intensity is allowed to provide heating of the material to temperatures of 1600 K. Diffusion of Na, Mg, Al ions into single crystals KBr in the temperature range 573-883 K, Al ions in the NiO-AlO system at 1373-1573 K, was studied. Diffusion annealing carried out under thermal and radiation-thermal heating of the samples. Then diffusion coefficients were determined. It was found stimulating action of irradiation on diffusion processes of Mg, Al ions in Kbr and Al ions in the NiO-Al[2]O[3] system, which consists in increasing the diffusion coefficients at radiation-thermal annealing. The observed effect is achieved by increasing the effective rate of diffusion jumps. | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\2008 |t IOP Conference Series: Materials Science and Engineering | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\19289 |t Vol. 168 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2016) |o XII International Conference, 4–12 September 2016, Tomsk, Russian Federation |o [proceedings] |v [012104, 5 p.] |d 2017 | |
| 610 | 1 | |a электронный ресурс | |
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| 610 | 1 | |a диффузионный массоперенос | |
| 610 | 1 | |a электронное облучение | |
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| 610 | 1 | |a ионные связи | |
| 610 | 1 | |a монокристаллы | |
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| 610 | 1 | |a радиационно-термический отжиг | |
| 610 | 1 | |a диффузия | |
| 701 | 1 | |a Bochkarev |b I. G. | |
| 701 | 1 | |a Gyngazov (Ghyngazov) |b S. A. |c specialist in the field of electronics |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1958- |g Sergey Anatolievich |3 (RuTPU)RU\TPU\pers\33279 |9 17024 | |
| 701 | 1 | |a Frangulyan (Franguljyan) |b Т. S. |c specialist in the field of electronics, dielectrics and semiconductors |c leading researcher of Tomsk Polytechnic University, candidate of physical and mathematical Sciences |f 1940- |g Tamara Semenovna |3 (RuTPU)RU\TPU\pers\33975 | |
| 701 | 1 | |a Petrova |b A. B. |c specialist in the field of non-destructive testing |c Associate Scientist of Tomsk Polytechnic University |f 1992- |g Anna Borisovna |3 (RuTPU)RU\TPU\pers\36438 | |
| 701 | 1 | |a Chernyavski (Chernyavskiy) |b A. V. |c specialist in the field of electronics |c senior researcher of Tomsk Polytechnic University, candidate of physico-mathematical sciences |f 1966- |g Aleksandr Viktorovich |3 (RuTPU)RU\TPU\pers\34159 | |
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