Influence irradiation argon ion SnO[2] on optical and electrical characteristics; IOP Conference Series: Materials Science and Engineering; Vol. 168 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2016)

書誌詳細
Parent link:IOP Conference Series: Materials Science and Engineering
Vol. 168 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2016).— 2017.— [012007, 5 p.]
第一著者: Asainov O. Kh. Oleg Khaydarovich
団体著者: Томский политехнический университет
その他の著者: Umnov S. P. Sergey Pavlovich, Temenkov V.
要約:Title screen
Tin oxide in the form of films has been deposited by reactive magnetron sputtering on glass substrates a room temperature. Process was carried out in such mode when the deposited films were conductive. The deposited films were irradiated with argon ions. Have been studied happening at that the changes optical and electric properties of films. Have been investigated optical properties of films in the range of 300-1100 nanometers by means of photometry. For research structure of films was used the x-ray diffractometry. Diffractometric researches have shown that the films deposited on a substrate have crystal structure from shares of a quasicrystal phase and after influence of argon ions she completely became quasicrystal. It is established that change transmission of a film correlates with change her electric resistance. Average value transmission in the range of 380-1100 nanometers as well as the electric resistance of a film with growth of irradiation time increases to the values exceeding initial. At the same time at irradiation time ~ 13,2 sec. are observed their slight decrease. To this value of irradiation time there corresponds the minimum value of electric resistance and transmission films. Change of transmission coefficient correlates with change of surface resistance.
言語:英語
出版事項: 2017
シリーズ:Physical and chemical phenomena in inorganic materials in radiation, electrical and thermal fields
主題:
オンライン・アクセス:http://dx.doi.org/10.1088/1757-899X/168/1/012007
http://earchive.tpu.ru/handle/11683/37764
フォーマット: 電子媒体 図書の章
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=653794

MARC

LEADER 00000nla2a2200000 4500
001 653794
005 20260715071717.0
035 |a (RuTPU)RU\TPU\network\19309 
035 |a RU\TPU\network\19306 
090 |a 653794 
100 |a 20170330a2017 k y0engy50 ba 
101 0 |a eng 
105 |a y z 100zy 
135 |a drgn ---uucaa 
181 0 |a i  
182 0 |a b 
200 1 |a Influence irradiation argon ion SnO[2] on optical and electrical characteristics  |f O. Kh. Asainov, S. P. Umnov, V. Temenkov 
203 |a Text  |c electronic 
225 1 |a Physical and chemical phenomena in inorganic materials in radiation, electrical and thermal fields 
300 |a Title screen 
320 |a [References: 24 tit.] 
330 |a Tin oxide in the form of films has been deposited by reactive magnetron sputtering on glass substrates a room temperature. Process was carried out in such mode when the deposited films were conductive. The deposited films were irradiated with argon ions. Have been studied happening at that the changes optical and electric properties of films. Have been investigated optical properties of films in the range of 300-1100 nanometers by means of photometry. For research structure of films was used the x-ray diffractometry. Diffractometric researches have shown that the films deposited on a substrate have crystal structure from shares of a quasicrystal phase and after influence of argon ions she completely became quasicrystal. It is established that change transmission of a film correlates with change her electric resistance. Average value transmission in the range of 380-1100 nanometers as well as the electric resistance of a film with growth of irradiation time increases to the values exceeding initial. At the same time at irradiation time ~ 13,2 sec. are observed their slight decrease. To this value of irradiation time there corresponds the minimum value of electric resistance and transmission films. Change of transmission coefficient correlates with change of surface resistance. 
461 0 |0 (RuTPU)RU\TPU\network\2008  |t IOP Conference Series: Materials Science and Engineering 
463 0 |0 (RuTPU)RU\TPU\network\19289  |t Vol. 168 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2016)  |o XII International Conference, 4–12 September 2016, Tomsk, Russian Federation  |o [proceedings]  |v [012007, 5 p.]  |d 2017 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a облучение 
610 1 |a ионы аргона 
610 1 |a оптические характеристики 
610 1 |a электрические характеристики 
610 1 |a пленки 
610 1 |a магнетронное распыление 
610 1 |a дифрактометрия 
610 1 |a стеклянные подложки 
700 1 |a Asainov  |b O. Kh.  |c physicist  |c Head of the laboratory of Tomsk Polytechnic University, Candidate of physical and mathematical sciences  |f 1957-  |g Oleg Khaydarovich  |3 (RuTPU)RU\TPU\pers\34632 
701 1 |a Umnov  |b S. P.  |c physicist  |c Senior researcher of Tomsk Polytechnic University, Candidate of physical and mathematical sciences  |f 1957-  |g Sergey Pavlovich  |3 (RuTPU)RU\TPU\pers\34215 
701 1 |a Temenkov  |b V. 
712 0 2 |a Томский политехнический университет  |c 1991-  |7 ca  |8 rus  |9 26305 
801 2 |a RU  |b 63413507  |c 20170404  |g RCR 
850 |a 63413507 
856 4 |u http://dx.doi.org/10.1088/1757-899X/168/1/012007 
856 4 |u http://earchive.tpu.ru/handle/11683/37764 
942 |c CF