Modeling of carbon penetration into silicon structure under the action of pulsed high-intensity ion beam

Modeling of carbon penetration into silicon structure under the action of pulsed high-intensity ion beam

Bibliographic Details
Parent link:Surface and Coatings Technology
Vol. 306, Pt. A : Surface Modification of Materials by Ion Beams (SMMIB 2015).— 2016.— [P. 54–57]
Main Author: Aktaev N. E. Nurken Erbolatovich
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Лаборатория № 1
Other Authors: Remnev G. E. Gennady Efimovich
Summary:Title screen
The action of high-intensity beam of carbon ions on a silicon sample is studied by means of a numerical modelling revealing formation of the in-depth carbon concentration profile in crystal lattice of silicon. We investigated three ways of the profile forming: short-pulsed ion implantation, recoil atoms mechanism and thermal diffusion of the carbon atoms adsorbed on the silicon surface. The latter is the result of high temperature gradient associated with the action of pulsed high-intensity ion beam. It is argued that the diffusion process plays the major role in forming of the concentration profile in the pre-surface layer of a silicon sample.
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2016
Subjects:
электронный ресурс
труды учёных ТПУ
ионные пучки
концентрация
имплантация
численное моделирование
задача Стефана
углерод
кремний
импульсные пучки
Online Access:http://dx.doi.org/10.1016/j.surfcoat.2016.04.050
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=653050
Description
Summary:Title screen
The action of high-intensity beam of carbon ions on a silicon sample is studied by means of a numerical modelling revealing formation of the in-depth carbon concentration profile in crystal lattice of silicon. We investigated three ways of the profile forming: short-pulsed ion implantation, recoil atoms mechanism and thermal diffusion of the carbon atoms adsorbed on the silicon surface. The latter is the result of high temperature gradient associated with the action of pulsed high-intensity ion beam. It is argued that the diffusion process plays the major role in forming of the concentration profile in the pre-surface layer of a silicon sample.
Режим доступа: по договору с организацией-держателем ресурса
DOI:10.1016/j.surfcoat.2016.04.050

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