Charge transfer processes in CsI:Tl using near-UV light

Charge transfer processes in CsI:Tl using near-UV light

Détails bibliographiques
Parent link:Journal of Luminescence
Vol. 155.— 2014.— [P. 79-83]
Collectivité auteur: Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра сильноточной электроники (СЭ)
Autres auteurs: Yakovlev V. Yu. Viktor Yurjevich, Trefilova L. N. Larisa Nikolaevna, Мелешко А. А. Анна Алексеевна, Alekseev V. D. Vadim Dmitrievich, Kosinov N. N. Nikolay Nikolaevich
Résumé:Title screen
This paper studies charge transfer processes in CsI:Tl crystals by analyzing the bulk photo-conductivity spectra, the temperature behavior of the bulk photo-conductivity current and the shape and intensity of the activator emission pulse excited by an electron pulse beam and/or laser pulse emission at temperatures between 80 and 400 K. The Tl concentration in CsI:Tl crystals varies from 10?3–10?1 mass%. It has been determined that near-UV light induces a bulk conductivity in CsI:Tl crystals only when the Tl concentration is greater than 3?10?3 mass%. A mechanism is proposed to explain the charge transfer processes with photons whose energy is approximately half the width of the CsI band gap. Near-UV light causes charge transfer from I? to Tl+ ions, forming Tl0 centers in the 6p2P1/2 ground and 6p2P3/2 excited states. The electron, assisted by phonons, leaves the Tl0 center from either the 6p2P1/2 or 6p2P3/2 states and overcomes the 0.13 or 0.30 eV energy barrier, respectively, and subsequently populates the activator conduction sub-bands, which are found inside the band gap of CsI:Tl. The formation of activator sub-bands is possible only above the threshold Tl concentration, i.e., above 3?10?3 mass%.
Режим доступа: по договору с организацией-держателем ресурса
Langue:anglais
Publié: 2014
Sujets:
электронный ресурс
труды учёных ТПУ
Accès en ligne:http://dx.doi.org/10.1016/j.jlumin.2014.05.019
Format: Électronique Chapitre de livre
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=652775

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