Charge transfer processes in CsI:Tl using near-UV light; Journal of Luminescence; Vol. 155
| Parent link: | Journal of Luminescence Vol. 155.— 2014.— [P. 79-83] |
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| Coauteur: | |
| Andere auteurs: | , , , , |
| Samenvatting: | Title screen This paper studies charge transfer processes in CsI:Tl crystals by analyzing the bulk photo-conductivity spectra, the temperature behavior of the bulk photo-conductivity current and the shape and intensity of the activator emission pulse excited by an electron pulse beam and/or laser pulse emission at temperatures between 80 and 400 K. The Tl concentration in CsI:Tl crystals varies from 10?3–10?1 mass%. It has been determined that near-UV light induces a bulk conductivity in CsI:Tl crystals only when the Tl concentration is greater than 3?10?3 mass%. A mechanism is proposed to explain the charge transfer processes with photons whose energy is approximately half the width of the CsI band gap. Near-UV light causes charge transfer from I? to Tl+ ions, forming Tl0 centers in the 6p2P1/2 ground and 6p2P3/2 excited states. The electron, assisted by phonons, leaves the Tl0 center from either the 6p2P1/2 or 6p2P3/2 states and overcomes the 0.13 or 0.30 eV energy barrier, respectively, and subsequently populates the activator conduction sub-bands, which are found inside the band gap of CsI:Tl. The formation of activator sub-bands is possible only above the threshold Tl concentration, i.e., above 3?10?3 mass%. Режим доступа: по договору с организацией-держателем ресурса |
| Taal: | Engels |
| Gepubliceerd in: |
2014
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| Onderwerpen: | |
| Online toegang: | http://dx.doi.org/10.1016/j.jlumin.2014.05.019 |
| Formaat: | Elektronisch Hoofdstuk |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=652775 |
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| 200 | 1 | |a Charge transfer processes in CsI:Tl using near-UV light |f V. Yu. Yakovlev [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 20 tit.] | ||
| 330 | |a This paper studies charge transfer processes in CsI:Tl crystals by analyzing the bulk photo-conductivity spectra, the temperature behavior of the bulk photo-conductivity current and the shape and intensity of the activator emission pulse excited by an electron pulse beam and/or laser pulse emission at temperatures between 80 and 400 K. The Tl concentration in CsI:Tl crystals varies from 10?3–10?1 mass%. It has been determined that near-UV light induces a bulk conductivity in CsI:Tl crystals only when the Tl concentration is greater than 3?10?3 mass%. A mechanism is proposed to explain the charge transfer processes with photons whose energy is approximately half the width of the CsI band gap. Near-UV light causes charge transfer from I? to Tl+ ions, forming Tl0 centers in the 6p2P1/2 ground and 6p2P3/2 excited states. The electron, assisted by phonons, leaves the Tl0 center from either the 6p2P1/2 or 6p2P3/2 states and overcomes the 0.13 or 0.30 eV energy barrier, respectively, and subsequently populates the activator conduction sub-bands, which are found inside the band gap of CsI:Tl. The formation of activator sub-bands is possible only above the threshold Tl concentration, i.e., above 3?10?3 mass%. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Journal of Luminescence | ||
| 463 | |t Vol. 155 |v [P. 79-83] |d 2014 | ||
| 610 | 1 | |a электронный ресурс | |
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| 701 | 1 | |a Yakovlev |b V. Yu. |c specialist in the field of lightning engineering |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1949- |g Viktor Yurjevich |3 (RuTPU)RU\TPU\pers\35728 |9 18886 | |
| 701 | 1 | |a Trefilova |b L. N. |g Larisa Nikolaevna | |
| 701 | 1 | |a Мелешко |b А. А. |c специалист в области светотехники |c ассистент, доцент Томского политехнического университета, кандидат физико-математических наук |f 1983- |g Анна Алексеевна |3 (RuTPU)RU\TPU\pers\37814 |9 20528 | |
| 701 | 1 | |a Alekseev |b V. D. |g Vadim Dmitrievich | |
| 701 | 1 | |a Kosinov |b N. N. |g Nikolay Nikolaevich | |
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