The Development of Self-Expanding Peripheral Stent with Ion-Modified Surface Layer; AIP Conference Proceedings; Vol. 1783 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016
| Parent link: | AIP Conference Proceedings Vol. 1783 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016.— 2016.— [020136, 4 p.] |
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| Autor corporatiu: | |
| Altres autors: | , , , , , , |
| Sumari: | Title screen In work researches of chemical composition of surface layers of self-expanding stents of nickel-titanium (NiTi) and their functional and mechanical properties after plasma immersion processing by ions of silicon (Si). It is established that in the treatment in the inner and outer surfaces of stents formed doped silicon layer with a thickness of 80 nm. The formation of the doped layer does not impair the functional properties of the stent. At human body temperature, the stent is fully restore its shape after removing the deforming load. The resulting graph of loading of stents during their compression between parallel plates. The research results allow the conclusion that Si-doped stents are promising for treatment of peripheral vascular disease. However, related studies on laboratory animals are required. Режим доступа: по договору с организацией-держателем ресурса |
| Idioma: | anglès |
| Publicat: |
2016
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| Matèries: | |
| Accés en línia: | http://dx.doi.org/10.1063/1.4966429 |
| Format: | Electrònic Capítol de llibre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=652715 |
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| 200 | 1 | |a The Development of Self-Expanding Peripheral Stent with Ion-Modified Surface Layer |f A. I. Lotkov [et al.] | |
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| 330 | |a In work researches of chemical composition of surface layers of self-expanding stents of nickel-titanium (NiTi) and their functional and mechanical properties after plasma immersion processing by ions of silicon (Si). It is established that in the treatment in the inner and outer surfaces of stents formed doped silicon layer with a thickness of 80 nm. The formation of the doped layer does not impair the functional properties of the stent. At human body temperature, the stent is fully restore its shape after removing the deforming load. The resulting graph of loading of stents during their compression between parallel plates. The research results allow the conclusion that Si-doped stents are promising for treatment of peripheral vascular disease. However, related studies on laboratory animals are required. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\4816 |t AIP Conference Proceedings | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\17851 |t Vol. 1783 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016 |o Proceedings of the International conference, 19–23 September 2016, Tomsk, Russia |f National Research Tomsk Polytechnic University (TPU); eds. V. E. Panin ; S. G. Psakhie ; V. M. Fomin |v [020136, 4 p.] |d 2016 | |
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| 701 | 1 | |a Kudryashov |b A. N. |g Andrey | |
| 701 | 1 | |a Krukovskii |b K. V. |g Konstantin | |
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