Short-Range Order and Electronic Properties of Epitaxial Graphene
| Parent link: | AIP Conference Proceedings Vol. 1783 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016.— 2016.— [020016, 3 p.] |
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| Corporate Author: | |
| Other Authors: | , , , , , , , , |
| Summary: | Title screen One of the most rapidly developing areas of modern materials science is the study of graphene and materials on its basis. The experimental investigations have revealed different types of defects on the surface of graphene that form the ordered structures of atomic configurations. In the present work, the value of short-range order parameter for different configurations of foreign atoms in a graphene layer was calculated. The effect of various factors on the density of electronic states and electrical resistance in graphene was also investigated. The type of the ordering of foreign atoms ingraphene rather than the concentration of impurities, was shown to be responsible for the change in the conductivity of graphene. Режим доступа: по договору с организацией-держателем ресурса |
| Published: |
2016
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| Subjects: | |
| Online Access: | http://dx.doi.org/10.1063/1.4966309 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=652602 |
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| 200 | 1 | |a Short-Range Order and Electronic Properties of Epitaxial Graphene |f N. G. Bobenko [et al.] | |
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| 300 | |a Title screen | ||
| 320 | |a [References: 6 tit.] | ||
| 330 | |a One of the most rapidly developing areas of modern materials science is the study of graphene and materials on its basis. The experimental investigations have revealed different types of defects on the surface of graphene that form the ordered structures of atomic configurations. In the present work, the value of short-range order parameter for different configurations of foreign atoms in a graphene layer was calculated. The effect of various factors on the density of electronic states and electrical resistance in graphene was also investigated. The type of the ordering of foreign atoms ingraphene rather than the concentration of impurities, was shown to be responsible for the change in the conductivity of graphene. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\4816 |t AIP Conference Proceedings | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\17851 |t Vol. 1783 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016 |o Proceedings of the International conference, 19–23 September 2016, Tomsk, Russia |f National Research Tomsk Polytechnic University (TPU); eds. V. E. Panin ; S. G. Psakhie ; V. M. Fomin |v [020016, 3 p.] |d 2016 | |
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| 701 | 1 | |a Bobenko |b N. G. |c Physicist |c Researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1986- |g Nadezhda Georgievna |2 stltpush |3 (RuTPU)RU\TPU\pers\37783 | |
| 701 | 1 | |a Egorushkin |b V. E. | |
| 701 | 1 | |a Melnikova |b N. V. | |
| 701 | 1 | |a Ponomarev |b A. N. |c mathematician |c Associate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1981- |g Aleksey Nikolaevich |2 stltpush |3 (RuTPU)RU\TPU\pers\38721 | |
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