Short-Range Order and Electronic Properties of Epitaxial Graphene

Bibliographic Details
Parent link:AIP Conference Proceedings
Vol. 1783 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016.— 2016.— [020016, 3 p.]
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Институт международного образования и языковой коммуникации (ИМОЯК) Кафедра междисциплинарная (МД)
Other Authors: Bobenko N. G. Nadezhda Georgievna, Egorushkin V. E., Melnikova N. V., Ponomarev A. N. Aleksey Nikolaevich, Belosludtseva A. A., Barkalov L. D., Latyshev A. M., Istomina E. B., Bobenko A. V.
Summary:Title screen
One of the most rapidly developing areas of modern materials science is the study of graphene and materials on its basis. The experimental investigations have revealed different types of defects on the surface of graphene that form the ordered structures of atomic configurations. In the present work, the value of short-range order parameter for different configurations of foreign atoms in a graphene layer was calculated. The effect of various factors on the density of electronic states and electrical resistance in graphene was also investigated. The type of the ordering of foreign atoms ingraphene rather than the concentration of impurities, was shown to be responsible for the change in the conductivity of graphene.
Режим доступа: по договору с организацией-держателем ресурса
Published: 2016
Subjects:
Online Access:http://dx.doi.org/10.1063/1.4966309
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=652602
Description
Summary:Title screen
One of the most rapidly developing areas of modern materials science is the study of graphene and materials on its basis. The experimental investigations have revealed different types of defects on the surface of graphene that form the ordered structures of atomic configurations. In the present work, the value of short-range order parameter for different configurations of foreign atoms in a graphene layer was calculated. The effect of various factors on the density of electronic states and electrical resistance in graphene was also investigated. The type of the ordering of foreign atoms ingraphene rather than the concentration of impurities, was shown to be responsible for the change in the conductivity of graphene.
Режим доступа: по договору с организацией-держателем ресурса
DOI:10.1063/1.4966309