Grinyaev S. N. Sergey Nikolaevich & Razzhuvalov A. N. Alexander Nikolaevich. (2016). Peculiarities of tunneling current in w-AlN/GaN(0001) two-barrier structures induced by deep-level defects. 2016. https://doi.org/10.1063/1.4964876
Chicago-referens (17:e uppl.)Grinyaev S. N. Sergey Nikolaevich och Razzhuvalov A. N. Alexander Nikolaevich. Peculiarities of Tunneling Current in W-AlN/GaN(0001) Two-barrier Structures Induced by Deep-level Defects. 2016, 2016. https://doi.org/10.1063/1.4964876.
MLA-referens (9:e uppl.)Grinyaev S. N. Sergey Nikolaevich och Razzhuvalov A. N. Alexander Nikolaevich. Peculiarities of Tunneling Current in W-AlN/GaN(0001) Two-barrier Structures Induced by Deep-level Defects. 2016, 2016. https://doi.org/10.1063/1.4964876.
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