Grinyaev S. N. Sergey Nikolaevich & Razzhuvalov A. N. Alexander Nikolaevich. (2016). Peculiarities of tunneling current in w-AlN/GaN(0001) two-barrier structures induced by deep-level defects; Journal of Applied Physics; Vol. 120, iss. 5. 2016. https://doi.org/10.1063/1.4964876
Παραπομπή σε μορφή Chicago (17η εκδ.)Grinyaev S. N. Sergey Nikolaevich και Razzhuvalov A. N. Alexander Nikolaevich. Peculiarities of Tunneling Current in W-AlN/GaN(0001) Two-barrier Structures Induced by Deep-level Defects; Journal of Applied Physics; Vol. 120, Iss. 5. 2016, 2016. https://doi.org/10.1063/1.4964876.
Παραπομπή σε μορφή MLA (9th εκδ.)Grinyaev S. N. Sergey Nikolaevich και Razzhuvalov A. N. Alexander Nikolaevich. Peculiarities of Tunneling Current in W-AlN/GaN(0001) Two-barrier Structures Induced by Deep-level Defects; Journal of Applied Physics; Vol. 120, Iss. 5. 2016, 2016. https://doi.org/10.1063/1.4964876.