A planar diode operating in the regime of limited electron emission; Technical Physics Letters; Vol. 34, iss. 4

A planar diode operating in the regime of limited electron emission; Technical Physics Letters; Vol. 34, iss. 4

Λεπτομέρειες βιβλιογραφικής εγγραφής
Parent link:	Technical Physics Letters.— , 1975- Vol. 34, iss. 4.— 2008.— [P. 292-295]
Κύριος συγγραφέας:	Pushkarev A. I. Aleksandr Ivanovich
Άλλοι συγγραφείς:	Sazonov R. V. Roman Vladimirovich
Περίληψη:	Title screen The current-voltage characteristic of a planar diode with a graphite explosive-emission cathode has been experimentally studied at the initial stage of electron current formation. An analytical expression has been obtained for the total area of discrete emitting centers in the cellular structure approximation, assuming that the number of such emitting centers operative during the current pulse formation is constant. It is shown that the electron current buildup for a cathode surface with discrete emitting centers is satisfactorily described by a modified Child-Langmuir formula with the form factor decreasing from F = 6 to 1. Режим доступа: по договору с организацией-держателем ресурса
Γλώσσα:	Αγγλικά
Έκδοση:	2008
Θέματα:	электронный ресурс труды учёных ТПУ плоские диоды
Διαθέσιμο Online:	http://dx.doi.org/10.1134/S106378500804007X
Μορφή:	Ηλεκτρονική πηγή Κεφάλαιο βιβλίου
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=652469

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