A planar diode operating in the regime of limited electron emission; Technical Physics Letters; Vol. 34, iss. 4

A planar diode operating in the regime of limited electron emission; Technical Physics Letters; Vol. 34, iss. 4

Detalles Bibliográficos
Parent link:Technical Physics Letters.— , 1975-
Vol. 34, iss. 4.— 2008.— [P. 292-295]
Autor principal: Pushkarev A. I. Aleksandr Ivanovich
Otros Autores: Sazonov R. V. Roman Vladimirovich
Sumario:Title screen
The current-voltage characteristic of a planar diode with a graphite explosive-emission cathode has been experimentally studied at the initial stage of electron current formation. An analytical expression has been obtained for the total area of discrete emitting centers in the cellular structure approximation, assuming that the number of such emitting centers operative during the current pulse formation is constant. It is shown that the electron current buildup for a cathode surface with discrete emitting centers is satisfactorily described by a modified Child-Langmuir formula with the form factor decreasing from F = 6 to 1.
Режим доступа: по договору с организацией-держателем ресурса
Lenguaje:inglés
Publicado: 2008
Materias:
электронный ресурс
труды учёных ТПУ
плоские диоды
Acceso en línea:http://dx.doi.org/10.1134/S106378500804007X
Formato: Electrónico Capítulo de libro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=652469

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