The effect of ion current density amplification in a diode with passive anode in magnetic self-isolation mod; Physics of Plasmas; Vol. 17, iss. 12
| Parent link: | Physics of Plasmas.— , 1958- Vol. 17, iss. 12.— 2010.— [123112, 5 р.] |
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| Yazar: | |
| Diğer Yazarlar: | , |
| Özet: | Title screen The results of a study on gigawatt power pulsed ion beam parameters are presented here. The pulsed ion beam is formed by a diode with an explosive-emission potential electrode, in magnetic self-isolation mode [A. I. Pushkarev, J. I. Isakova, M. S. Saltimakov et al., Phys. Plasmas 17, 013104 (2010)]. The ion current density is 20–40 A/cm220–40 A/cm2, the energy of the ions is 200–250 keV, and the beam composition is of protons and carbon ions. Experiments have been performed on the TEMP-4M accelerator, set in double-pulse formation mode. To measure the beam parameters, we used a time-of-flight diagnosis. It is shown that the carbon ion current density, formed in a planar diode with graphite potential electrode, is five to seven times higher than the values calculated from the Child–Langmuir ratio. A model of ion current density amplification in a diode with magnetic self-isolation is proposed. The motion of electrons in the anode-cathode gap is simulated using the program CST PARTICLE STUDIO. Режим доступа: по договору с организацией-держателем ресурса |
| Dil: | İngilizce |
| Baskı/Yayın Bilgisi: |
2010
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| Konular: | |
| Online Erişim: | http://dx.doi.org/10.1063/1.3526736 |
| Materyal Türü: | MixedMaterials Elektronik Kitap Bölümü |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=652410 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 652410 | ||
| 005 | 20250402093541.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\17712 | ||
| 035 | |a RU\TPU\network\17709 | ||
| 090 | |a 652410 | ||
| 100 | |a 20161222d2010 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 102 | |a US | ||
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a The effect of ion current density amplification in a diode with passive anode in magnetic self-isolation mod |f A. I. Pushkarev, Yu. I. Isakova, D. V. Vakhrushev | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 11 tit.] | ||
| 330 | |a The results of a study on gigawatt power pulsed ion beam parameters are presented here. The pulsed ion beam is formed by a diode with an explosive-emission potential electrode, in magnetic self-isolation mode [A. I. Pushkarev, J. I. Isakova, M. S. Saltimakov et al., Phys. Plasmas 17, 013104 (2010)]. The ion current density is 20–40 A/cm220–40 A/cm2, the energy of the ions is 200–250 keV, and the beam composition is of protons and carbon ions. Experiments have been performed on the TEMP-4M accelerator, set in double-pulse formation mode. To measure the beam parameters, we used a time-of-flight diagnosis. It is shown that the carbon ion current density, formed in a planar diode with graphite potential electrode, is five to seven times higher than the values calculated from the Child–Langmuir ratio. A model of ion current density amplification in a diode with magnetic self-isolation is proposed. The motion of electrons in the anode-cathode gap is simulated using the program CST PARTICLE STUDIO. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Physics of Plasmas |d 1958- | ||
| 463 | |t Vol. 17, iss. 12 |v [123112, 5 р.] |d 2010 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a импульсный пучок ионов | |
| 610 | 1 | |a ионные пучки | |
| 700 | 1 | |a Pushkarev |b A. I. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences, Senior researcher |f 1954- |g Aleksandr Ivanovich |3 (RuTPU)RU\TPU\pers\32701 |9 16587 | |
| 701 | 1 | |a Isakova |b Yu. I. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of Technical Sciences |f 1988- |g Yulia Ivanovna |3 (RuTPU)RU\TPU\pers\32700 |9 16586 | |
| 701 | 1 | |a Vakhrushev |b D. V. | |
| 801 | 2 | |a RU |b 63413507 |c 20161224 |g RCR | |
| 856 | 4 | |u http://dx.doi.org/10.1063/1.3526736 | |
| 942 | |c CF | ||