Analysis of drifting electron concentration in a self-magnetically insulated ion diode

Analysis of drifting electron concentration in a self-magnetically insulated ion diode

Библиографические подробности
Источник:	Technical Physics Letters: Scientific Journal.— , 1975- Vol. 41, iss. 2.— 2015.— [P. 146-148]
Главный автор:	Pushkarev A. I. Aleksandr Ivanovich
Автор-организация:	Национальный исследовательский Томский политехнический университет Институт физики высоких технологий
Другие авторы:	Pak V. G.
Примечания:	Title screen The drifting electron concentration in a self-magnetically insulated ion diode is analyzed using a TEMP-4M accelerator operating in a double bipolar pulse regime with the first pulse (300–600 ns and 150–200 kV) being negative and the second (120 ns and 250–300 kV) being positive. The electron concentration in the drift region is shown to be 1013–1014 cm-3. It is established that the Lorentz force acting on electrons in crossed electric and magnetic fields is 150–200 times greater than the Coulomb repulsion force, which ensures a higher electron concentration in the drift region as compared with the space charge region. Режим доступа: по договору с организацией-держателем ресурса
Язык:	английский
Опубликовано:	2015
Предметы:	электронный ресурс труды учёных ТПУ ионные диоды
Online-ссылка:	http://dx.doi.org/10.1134/S1063785015020121
Формат:	Электронный ресурс Статья
Запись в KOHA:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=652316

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