Generation of X rays at the grazing incidence of 18-MeV electrons on a thin Si crystal in a betatron chamber

গ্রন্থ-পঞ্জীর বিবরন
Parent link:JETP Letters: Scientific Journal.— , 1974-
Vol. 103, iss. 11.— 2016.— [P. 723–727]
সংস্থা লেখক: Национальный исследовательский Томский политехнический университет Институт неразрушающего контроля Лаборатория № 42 (Сильноточных бетатронов)
অন্যান্য লেখক: Rychkov M. M. Maksim Mikhailovich, Kaplin V. V. Valery Viktorovich, Sukharnikov K. V. Konstantin Vladimirovich, Vaskovsky I. K. Ivan Kirillovich
সংক্ষিপ্ত:Title screen
The generation of X rays at the grazing incidence of 18-MeV electrons with a 50-μm-thick Si crystal 4 mm in length along the electron beam has been studied. The crystal has been placed in a goniometer inside the chamber of a B-18 betatron. The results exhibit strong changes in the angular distribution of bremsstrahlung at the variation of the orientation of the crystal. This effect is not observed in the case of the normal incidence of electrons on the surface of a thin crystal where the channeling of electrons, which occurs at certain orientation of the crystal, is absent. Images of a reference microstructure have been obtained with a high resolution of details of the microstructure owing to the smallness of the source of radiation. The dependence of the contrast of an image on the position of the microstructure in the radiation cone has been demonstrated.
Режим доступа: по договору с организацией-держателем ресурса
প্রকাশিত: 2016
বিষয়গুলি:
অনলাইন ব্যবহার করুন:http://dx.doi.org/10.1134/S0021364016110114
বিন্যাস: বৈদ্যুতিক গ্রন্থের অধ্যায়
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=652282
বিবরন
সংক্ষিপ্ত:Title screen
The generation of X rays at the grazing incidence of 18-MeV electrons with a 50-μm-thick Si crystal 4 mm in length along the electron beam has been studied. The crystal has been placed in a goniometer inside the chamber of a B-18 betatron. The results exhibit strong changes in the angular distribution of bremsstrahlung at the variation of the orientation of the crystal. This effect is not observed in the case of the normal incidence of electrons on the surface of a thin crystal where the channeling of electrons, which occurs at certain orientation of the crystal, is absent. Images of a reference microstructure have been obtained with a high resolution of details of the microstructure owing to the smallness of the source of radiation. The dependence of the contrast of an image on the position of the microstructure in the radiation cone has been demonstrated.
Режим доступа: по договору с организацией-держателем ресурса
ডিওআই:10.1134/S0021364016110114